This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.

Advanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.

Nanoelectronics, as a true successor of microelectronics, is certainly a major technology boomer in the 21st century. This has been shown by its several applications and also by its enormous potential to influence all areas of electronics, computers, information technology, aerospace defense, and consumer goods. Although the current semiconductor technology is projected to reach its physical limit in about a decade, nanoscience and nanotechnology promise breakthroughs for the future. The present books provides an in-depth review of the latest advances in the technology of nanoelectronic devices and their developments over the past decades. Moreover, it introduces new concepts for the realization of future nanoelectronic devices. The main focus of the book is on three fundamental branches of semiconductor products or applications: logic, memory, and RF and communication. By pointing out to the key technical challenges, important aspects and characteristics of various designs are used to illustrate mechanisms that overcome the technical barriers. Furthermore, by comparing advantages and disadvantages of different designs, the most promising solutions are indicated for each application.

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. - Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more - Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures - Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies

Ferroelectricity is a symptom of inevitable electrical polarization changes in materials without external electric field interference. Ferroelectricity is a phenomenon exhibited by crystals with a spontaneous polarization and hysteresis effects associated with dielectric changes when an electric field is given. Our fascination with ferroelectricity is in recognition of a beautiful article by Itskovsky, in which he explains the kinetics of a ferroelectric phase transition in a thin ferroelectric layer (film). We have been researching ferroelectric materials since 2001. There are several materials known for their ferroelectric properties. Barium titanate and barium strontium titanate are the most well known. Several others include tantalum oxide, lead zirconium titanate, gallium nitride, lithium tantalate, aluminium, copper oxide, and lithium niobate. There is still a blue ocean of ferroelectric applications yet to be expounded. It is and hopefully always will be a bright future.

Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face