Electron Microscopy in Material Science covers the proceedings of the International School of Electron Microscopy held in Erice, Itsaly, in 1970. The said conference is intended to the developments of electron optics and electron microscopy and its applications in material science. The book is divided into four parts. Part I discusses the impact of electron microscopy in the science of materials. Part II covers topics such as electron optics and instrumentation; geometric electron optics and its problems; and special electron microscope specimen stages. Part III explains the theory of electron diffraction image contrast and then elaborates on related areas such as the application of electron diffraction and of electron microscopy to radiation; computing methods; and problems in electron microscopy. Part IV includes topics such as the transfer of image information in the electron microscope; phase contrast microscopy; and the magnetic phase contrast. The text is recommended for electron microscopists who are interested in the application of their field in material science, as well as for experts in the field of material science and would like to know about the importance of electron microscopy.

High-resolution electron microscopy (HREM) has become a most powerful method for investigating the internal structure of materials on an atomic scale of around 0.1 nm. The authors clearly explain both the theory and practice of HREM for materials science. In addition to a fundamental formulation of the imaging process of HREM, there is detailed explanation of image simulationindispensable for interpretation of high-resolution images. Essential information on appropriate imaging conditions for observing lattice images and structure images is presented, and methods for extracting structural information from these observations are clearly shown, including examples in advanced materials. Dislocations, interfaces, and surfaces are dealt with, and materials such as composite ceramics, high-Tc superconductors, and quasicrystals are also considered. Included are sections on the latest instruments and techniques, such as the imaging plate and quantitative HREM.

Analytical electron microscopy is one of the most powerful tools today for characterization of the advanced materials that support the nanotechnology of the twenty-first century. In this book the authors clearly explain both the basic principles and the latest developments in the field. In addition to a fundamental description of the inelastic scattering process, an explanation of the constituent hardware is provided. Standard quantitative analytical techniques employing electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy are also explained, along with elemental mapping techniques. Included are sections on convergent beam electron diffraction and electron holography utilizing the field emission gun. With generous use of illustrations and experimental data, this book is a valuable resource for anyone concerned with materials characterization, electron microscopy, materials science, crystallography, and instrumentation.

Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.

This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.

Scanning and stationary-beam electron microscopes are indispensable tools for both research and routine evaluation in materials science, the semiconductor industry, nanotechnology and the biological, forensic, and medical sciences. This book introduces current theory and practice of electron microscopy, primarily for undergraduates who need to understand how the principles of physics apply in an area of technology that has contributed greatly to our understanding of life processes and "inner space." Physical Principles of Electron Microscopy will appeal to technologists who use electron microscopes and to graduate students, university teachers and researchers who need a concise reference on the basic principles of microscopy.

This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes laboratory exercises.

Crystallographic texture or preferred orientation has long been known to strongly influence material properties. Historically, the means of obtaining such texture data has been though the use of x-ray or neutron diffraction for bulk texture measurements, or transmission electron microscopy or electron channeling for local crystallographic information. In recent years, we have seen the emergence of a new characterization technique for probing the microtexture of materials. This advance has come about primarily through the automated indexing of electron backscatter diffraction (EBSD) patterns. The first commercially available system was introduced in 1994, and since then of sales worldwide has been dramatic. This has accompanied widening the growth applicability in materials scienceproblems such as microtexture, phase identification, grain boundary character distribution, deformation microstructures, etc. and is evidence that this technique can, in some cases, replace more time-consuming transmission electron microscope (TEM) or x-ray diffraction investigations. The benefits lie in the fact that the spatial resolution on new field emission scanning electron microscopes (SEM) can approach 50 nm, but spatial extent can be as large a centimeter or greater with a computer controlled stage and montagingofthe images. Additional benefits include the relative ease and low costofattaching EBSD hardware to new or existing SEMs. Electron backscatter diffraction is also known as backscatter Kikuchi diffraction (BKD), or electron backscatter pattern technique (EBSP). Commercial names for the automation include Orientation Imaging Microscopy (OIMTM) and Automated Crystal Orientation Mapping (ACOM).

Since the publication in 1979 of Introduction to Analytical Electron Microscopy (ed. J. J. Hren, J. I. Goldstein, and D. C. Joy; Plenum Press), analytical electron microscopy has continued to evolve and mature both as a topic for fundamental scientific investigation and as a tool for inorganic and organic materials characterization. Significant strides have been made in our understanding of image formation, electron diffraction, and beam/specimen interactions, both in terms of the "physics of the processes" and their practical implementation in modern instruments. It is the intent of the editors and authors of the current text, Principles of Analytical Electron Microscopy, to bring together, in one concise and readily accessible volume, these recent advances in the subject. The text begins with a thorough discussion of fundamentals to lay a foundation for today's state-of-the-art microscopy. All currently important areas in analytical electron microscopy-including electron optics, electron beam/specimen interactions, image formation, x-ray microanalysis, energy-loss spectroscopy, electron diffraction and specimen effects-have been given thorough attention. To increase the utility of the volume to a broader cross section of the scientific community, the book's approach is, in general, more descriptive than mathematical. In some areas, however, mathematical concepts are dealt with in depth, increasing the appeal to those seeking a more rigorous treatment of the subject.

Scanning Transmission Electron Microscopy: Advanced Characterization Methods for Materials Science Applications The information comprised in this book is focused on discussing the latest approaches in the recording of high-fidelity quantitative annular dark-field (ADF) data. It showcases the application of machine learning in electron microscopy and the latest advancements in image processing and data interpretation for materials notoriously difficult to analyze using scanning transmission electron microscopy (STEM). It also highlights strategies to record and interpret large electron diffraction datasets for the analysis of nanostructures. This book: Discusses existing approaches for experimental design in the recording of high-fidelity quantitative ADF data Presents the most common types of scintillator-photomultiplier ADF detectors, along with their strengths and weaknesses. Proposes strategies to minimize the introduction of errors from these detectors and avenues for dealing with residual errors Discusses the practice of reliable multiframe imaging, along with the benefits and new experimental opportunities it presents in electron dose or dose-rate management Focuses on supervised and unsupervised machine learning for electron microscopy Discusses open data formats, community-driven software, and data repositories Proposes methods to process information at both global and local scales, and discusses avenues to improve the storage, transfer, analysis, and interpretation of multidimensional datasets Provides the spectrum of possibilities to study materials at the resolution limit by means of new developments in instrumentation Recommends methods for quantitative structural characterization of sensitive nanomaterials using electron diffraction techniques and describes strategies to collect electron diffraction patterns for such materials This book helps academics, researchers, and industry professionals in materials science, chemistry, physics, and related fields to understand and apply computer-science–derived analysis methods to solve problems regarding data analysis and interpretation of materials properties.