Diffraction and Imaging Techniques in Material Science reviews recent developments in diffraction and imaging techniques used in the study of materials. It discusses advances in high-voltage electron microscopy, low-energy electron diffraction (LEED), X-ray and neutron diffraction, X-ray topography, mirror electron microscopy, and field emission microscopy. Organized into five parts encompassing nine chapters, this volume begins with an overview of the dynamical theory of the diffraction of high-energy electrons in crystals and methodically introduces the reader to dynamical diffraction in perfect and imperfect crystals, inelastic scattering of electrons in crystals, and X-ray production. It then explores back scattering effects, the technical features of high-voltage electron microscopes, and surface characterization by LEED. Other chapters focus on the kinematical theory of X-ray diffraction, techniques and interpretation in X-ray topography, and interpretation of the contrast of the images of defects on X-ray topographs. The book also describes theory and applications of mirror electron microscopy, surface studies by field emission of electrons, field ionization and field evaporation, and gas-surface interactions before concluding with a discussion on lattice imperfections. Scientists and students taking courses on diffraction and solid-state electron microscopy will benefit from this book.

Diffraction and Imaging Techniques in Material Science describes the various methods used to study the atomic structure of matter at an atomic scale based on the interaction between matter and radiation. It classifies the possible methods of observation by making a list of radiations on the basis of wavelength, including ions, X-ray photons, neutrons, and electrons. It also discusses transmission electron microscopy, the weak-beam method of electron microscopy, and some applications of transmission electron microscopy to phase transitions. Organized into 13 chapters, this volume begins with an overview of the kinematic theory of electron diffraction and the ways to treat diffraction by a deformed crystal. It discusses the dynamical theory of diffraction of fast electrons, the treatment of absorption in the dynamical theory of electron diffraction, the use of electron microscopy to study planar interfaces, and analysis of weak-beam images. The book also covers the use of computed electron micrographs in defect identification, crystallographic analysis of dislocation loops containing shear components, and detection and identification of small coherent particles. In addition, the reader is introduced to interpretation of diffuse scattering and short-range order, along with the crystallography of martensitic transformations. The remaining chapters focus on the working principle of the transmission electron microscope, experimental structure imaging of crystals, and the study of diffuse scattering effects originating from substitutional disorder and displacement disorder. The information on diffraction and imaging techniques in material science contained in this book will be helpful to students, researchers, and scientists.

Until comparatively recently, trace analysis techniques were in general directed toward the determination of impurities in bulk materials. Methods were developed for very high relative sensitivity, and the values determined were average values. Sampling procedures were devised which eliminated the so-called sampling error. However, in the last decade or so, a number of developments have shown that, for many purposes, the distribution of defects within a material can confer important new properties on the material. Perhaps the most striking example of this is given by semiconductors; a whole new industry has emerged in barely twenty years based entirely on the controlled distribu tion of defects within what a few years before would have been regarded as a pure, homogeneous crystal. Other examples exist in biochemistry, metallurgy, polyiners and, of course, catalysis. In addition to this of the importance of distribution, there has also been a recognition growing awareness that physical defects are as important as chemical defects. (We are, of course, using the word defect to imply some dis continuity in the material, and not in any derogatory sense. ) This broadening of the field of interest led the Materials Advisory Board( I} to recommend a new definition for the discipline, "Materials Character ization," to encompass this wider concept of the determination of the structure and composition of materials. In characterizing a material, perhaps the most important special area of interest is the surface.

This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.