If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.

This newly revised and expanded edition of the 2003 Artech House classic, Radio Frequency Integrated Circuit Design, serves as an up-to-date, practical reference for complete RFIC know-how. The second edition includes numerous updates, including greater coverage of CMOS PA design, RFIC design with on-chip components, and more worked examples with simulation results. By emphasizing working designs, this book practically transports you into the authors' own RFIC lab so you can fully understand the function of each design detailed in this book. Among the RFIC designs examined are RF integrated LC-based filters, VCO automatic amplitude control loops, and fully integrated transformer-based circuits, as well as image reject mixers and power amplifiers. If you are new to RFIC design, you can benefit from the introduction to basic theory so you can quickly come up to speed on how RFICs perform and work together in a communications device. A thorough examination of RFIC technology guides you in knowing when RFICs are the right choice for designing a communication device. This leading-edge resource is packed with over 1,000 equations and more than 435 illustrations that support key topics.

Radio-Frequency Microelectronic Circuits for Telecommunication Applications covers the design issues of radio-frequency microelectronic circuits for telecommunication applications with emphasis on devices and circuit-level design. It uses a large number of real examples from industrial design as a vehicle both to teach the principles and to ensure relevance starting from device level modeling to basic RF microelectronic circuit cell design. Modeling for high-frequency operation of both active and passive integrated devices is covered starting from the bipolar transistor to the MOS transistor to the modeling of integrated spiral inductors, resistors, capacitors, varactors and package parasitics structures. A chapter is also devoted to the presentation of the basic definitions and terminology used in RF IC design. The book continues with the presentation of the principal building blocks of an integrated RF front-end, namely, the LNA, the mixer, the VCO and integrated filters. Design paradigms are provided classified on the technology used in each case: pure bipolar, CMOS, BiCMOS or SiGe. Radio-Frequency Microelectronic Circuits for Telecommunication Applications is essential reading for all researchers, practising engineers and designers working in RF electronics. It is also a reference for use in advanced undergraduate or graduate courses in the same field.

This book, first published in 2004, is an expanded and revised edition of Tom Lee's acclaimed RFIC text.

Providing coverage of the upper GHz domain, this book deals with design, optimisation and modelling of high-speed circuits on advanced technologies. It also addresses silicon based technologies such as aggressively scaled CMOS, HBT BiCMOS, silicon on insulator (SOI), strained silicon, double gate field effect transistors, low-k, and MEMS. The striking feature of "Radio Frequency Integrated Circuits and Technologies" is its coverage of the upper GHz domain. It deals with design, optimisation and modelling of high-speed circuits on advanced technologies and addresses the latest silicon based technologies such as aggressively scaled CMOS, HBT BiCMOS, silicon on insulator (SOI), strained silicon, double gate field effect transistors, low-k, MEMS, etc. as well as the corresponding enhancements in terms of circuit and system design. In addition to existing communication standards, novel standards such as ultra-wideband (UWB) and millimetre wave WLAN are discussed, which require enhanced circuit system topologies and components. Among these novel ICs are e.g. multi-band circuits, pulse generators and bulk acoustic wave filters. Design examples are provided including cookbook-like optimization strategies. The circuits represent the state-of-the-art making the book very valuable for researchers as well as for engineers in industry. Furthermore, the proposed book serves as fruitful basis for lectures in the area of IC design.

A practical, engineering book discussing the most modern and general techniques for designing analog integrated circuits which are not digital (excluding computer circuits). Covers the basics of the devices, manufacturing technology, design procedures, shortcuts, and analytic techniques. Includes examples and illustrations of the best current practice.

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Summarizes the schemes and technologies in RF circuit design, describes the basic parameters of an RF system and the fundamentals of RF system design, and presents an introduction of the individual RF circuit block design. Forming the backbone of today's mobile and satellite communications networks, radio frequency (RF) components and circuits are incorporated into everything that transmits or receives a radio wave, such as mobile phones, radio, WiFi, and walkie talkies. RF Circuit Design, Second Edition immerses practicing and aspiring industry professionals in the complex world of RF design. Completely restructured and reorganized with new content, end-of-chapter exercises, illustrations, and an appendix, the book presents integral information in three complete sections: Part One explains the different methodologies between RF and digital circuit design and covers voltage and power transportation, impedance matching in narrow-band case and wide-band case, gain of a raw device, measurement, and grounding. It also goes over equipotentiality and current coupling on ground surface, as well as layout and packaging, manufacturability of product design, and radio frequency integrated circuit (RFIC). Part Two includes content on the main parameters and system analysis in RF circuit design, the fundamentals of differential pair and common-mode rejection ratio (CMRR), Balun, and system-on-a-chip (SOC). Part Three covers low-noise amplifier (LNA), power amplifier (PA), voltage-controlled oscillator (VCO), mixers, and tunable filters. RF Circuit Design, Second Edition is an ideal book for engineers and managers who work in RF circuit design and for courses in electrical or electronic engineering.

Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction. An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices. Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies. - Fully updated to include the newest cutting edge technology of RF circuit design - Contains practical, hands-on design advice to help you save time, money and resources - Written by engineers for engineers to use in the field