This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.

Integrated circuit design for space applications can require radiation immunity, cryogenic operation and low power consumption. This thesis provides analysis and characterization of a SiGe BiCMOS low power operational amplifier (op amp) designed for lunar surface applications. The op amp has been fabricated on a commercially available 0.35-micron Silicon-Germanium (SiGe) BiCMOS process. The Heterojunction bipolar transistors (HBT) available in the SiGe process have been used in this op amp to take advantage of the total ionizing dose (TID) irradiation immunity and superb cryogenic operation, along with PMOS devices that show better TID immunity than their NMOS counterparts. The key features of the op amp include rail-to-rail output voltage swing, low input offset voltage, high open-loop gain and low supply current. The characterization of op amp is done for extreme temperatures and the results demonstrate that the op amp is fully functional across the lunar surface temperature range of -180°C to +120°C. The wide temperature operation of this op amp is tested using different bias current techniques such as proportional-to-absolute-temperature current, constant current and constant inversion coefficient current sources to investigate optimal biasing strategies for BiCMOS analog design. In addition, the SiGe BiCMOS low power op amp provides lower power consumption with the same or better unity-gain bandwidth when compared to a CMOS op amp with similar circuit topology.

The microwave and millimeter wave frequency range is nowadays widely exploited in a large variety of fields including (wireless) communications, security, radar, spectroscopy, but also astronomy and biomedical, to name a few. This Special Issue focuses on the interaction between the nanoscale dimensions and centimeter to millimeter wavelengths. This interaction has been proven to be efficient for the design and fabrication of devices showing enhanced performance. Novel contributions are welcome in the field of devices based on nanoscaled geometries and materials. Applications cover, but not are limited to, electronics, sensors, signal processing, imaging and metrology, all exploiting nanoscale/nanotechnology at microwave and millimeter waves. Contributions can take the form of short communications, regular or review papers.

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.

Millimeter-Wave Integrated Circuits delivers a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book is broad, spanning detailed discussions of high-frequency materials and technologies, high-frequency devices, and the design of high-frequency circuits. The design material is supplemented as appropriate by theoretical analyses. The broad scope of the book gives the reader a good theoretical and practical understanding of mm-wave circuit design. It is best-suited for both undergraduate students who are reading or studying high frequency circuit design and postgraduate students who are specializing in the mm-wave field.

The continued public demand for faster wireless data transfer, and the related expanding volume of mobile data traffic have led cellular network designers to envision new fifth-generation (5G) mobile networks which will leverage the large instantaneous bandwidths available within the microwave and millimeter-wave (mm-wave) frequency spectrums to achieve data-rates in the order of gigabits per second. The research presented in this dissertation will explore the design of two radio blocks which become especially challenging when moved to 5G bands: the power amplifier (PA) and frequency synthesizer. Using 0.12 [mu]m SiGe BiCMOS technology, examples of both blocks were designed and demonstrate measured power and noise performance suitable for 5G systems. Practical challenges related to the stability and detuning of mm-wave amplifiers after packaging are also explored. Mitigation strategies are presented and the proper assembly of the PA circuits onto a low-cost printed circuit-board (PCB) such that detuning and oscillations are avoided is demonstrated.

Describes the theory, modeling, and design of tunable mm-wave circuits and systems using CMOS, RF MEMS, and microwave liquid crystals.