In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable. Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.

In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable. Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.

Gaseous Dielectrics VIII covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.

As part of its current physics decadal survey, Physics 2010, the NRC was asked by the DOE, NSF, and NASA to carry out an assessment of and outlook for the broad field of plasma science and engineering over the next several years. The study was to focus on progress in plasma research, identify the most compelling new scientific opportunities, evaluate prospects for broader application of plasmas, and offer guidance to realize these opportunities. The study paid particular attention to these last two points. This "demand-side" perspective provided a clear look at what plasma research can do to help achieve national goals of fusion energy, economic competitiveness, and nuclear weapons stockpile stewardship. The report provides an examination of the broad themes that frame plasma research: low-temperature plasma science and engineering; plasma physics at high energy density; plasma science of magnetic fusion; space and astrophysical science; and basic plasma science. Within those themes, the report offers a bold vision for future developments in plasma science.

In recent years chemical engineers have become increasingly involved in the design and synthesis of new materials and products as well as the development of biological processes and biomaterials. Such applications often demand that product properties be controlled with precision. Molecular modeling, simulating chemical and molecular structures or processes by computer, aids scientists in this endeavor. Volume 28 of Advances in Chemical Engineering presents discussions of theoretical and computational methods as well as their applications to specific technologies.

Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]

Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

This series, established in 1965, is concerned with recent developments in the general area of atomic, molecular, and optical physics. The field is in a state of rapid growth, as new experimental and theoretical techniques are used on many old and new problems. Topics covered also include related applied areas, such asatmospheric science, astrophysics, surface physics, and laser physics. Articles are written by distinguished experts who are active in their research fields. The articles contain both relevant review material as well as detailed descriptions of important recent developments.