Cluster Ion-Solid Interactions: Theory, Simulation, and Experiment provides an overview of various concepts in cluster physics and related topics in physics, including the fundamentals and tools underlying novel cluster ion beam technology. The material is based on the author's highly regarded courses at Kyoto University, Purdue University, the Mos

Comprehensive guide to an important materials science technique for students and researchers.

Several beam-solid interaction techniques have been developed that can either stand alone or be used in connection with others for materials processing, for fabrication of devices with enhanced electro-optical and mechanical properties, and with enhanced resistance to corrosion and erosion. For example, advances in focused ion beams (FIB) have brought out-of-reach ideas and applications to fruition. This book from MRS focuses on the developments in ion-beam-assisted processing of materials and reviews successful applications of the techniques. Topics include: fundamentals of ion-solid interactions; ion-beam mixing; radiation damage; insulators and wide bandgap materials; polymers; optical materials; plasma and ion-assisted techniques; metals and tribology; focused ion beams; fundamental semiconductor processing and compound semiconductors.

This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.

The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

In this book the author discusses the investigation of ion bombardment of solids by computer simulation, with the aim of demonstrating the usefulness of this approach to the problem of interactions of ions with solids. The various chapters present the basic physics behind the simulation programs, their structure and many applications to different topics. The two main streams, the binary collision model and the classical dynamics model, are discussed, as are interaction potentials and electronic energy losses. The main topics investigated are backscattering, sputtering and implantation for incident atomic particles with energies from the eV to the MeV range. An extensive overview of the literature is given, making this book of interest to the active reseacher as well to students entering the field.

The book presents fundamentals of plasma physics with rich references and computational techniques in a concise manner. It particularly focuses on introductions to numerical simulation methods in plasma physics, in addition to those to physics and mathematics in plasma physics. It also presents the fundamentals of numerical methods, which solve mathematical models of plasmas, together with examples of numerical results. A discretization method, the so-called finite difference method, is introduced for particle-in-cell methods and fluid codes, which have been widely employed in plasma physics studies. In addition to the introduction to numerical solutions, it also covers numerical stability. The instabilities and numerical errors significantly influence the results, and for correct results, great efforts are required to avoid such numerical artifacts. The book also carefully discusses the numerical errors, numerical stability, and uncertainty in numerical computations. Readers are expected to have an understanding of fundamental physics of mechanics, electromagnetism, thermodynamics, statistical physics, relativity, fluid dynamics, and mathematics, but the book does not assume background knowledge on plasma. Therefore, it is a first book of plasma physics for upper undergraduate and early graduate students who are interested in learning it.

This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.

This book is devoted to one of the most active domains of atomic physic- atomic physics of heavy positive ions. During the last 30 years, this terrain has attracted enormous attention from both experimentalists and theoreti cians. On the one hand, this interest is stimulated by rapid progress in the development of laboratory ion sources, storage rings, ion traps and methods for ion cooling. In many laboratories, a considerable number of complex and accurate experiments have been initiated, challenging new frontiers. Highly charged ions are used for investigations related to fundamental research and to more applied fields such as controlled nuclear fusion driven by heavy ions and its diagnostics, ion-surface interaction, physics of hollow atoms, x-ray lasers, x-ray spectroscopy, spectrometry of ions in storage rings and ion traps, biology, and medical therapy. On the other hand, the new technologies have stimulated elaborate theo retical investigations, especially in developing QED theory, relativistic many body techniques, plasma-kinetic modeling based on the Coulomb interactions of highly charged ions with photons and various atomic particles - electrons, atoms, molecules and ions. The idea of assembling this book matured while the editors were writ ing another book, X-Ray Radiation of Highly Charged Ions by H. F. Beyer, H. -J. Kluge and V. P. Shevelko (Springer, Berlin, Heidelberg 1997) covering a broad range of x-ray and other radiative phenomena central to atomic physics with heavy ions.