This issue of ECS Transactions includes papers presented during the 11th International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing held during the ECS Fall Meeting in Vienna, Austria, October 4-9, 2009.

This issue covers topics related to the removal of contaminants from and conditioning of Si (SOI), SiC, Ge, SiGe, and III-V semiconductor surfaces; cleaning media, including non-aqueous cleaning methods and tools; front- and back-end cleaning operations; integrated cleaning; cleaning of MEMS; photomasks (reticles); porous low-k dielectrics; post-CMP cleaning; wafer bevel cleaning and polishing; characterization, evaluation, and monitoring of cleaning; correlation with device performance as well as cleaning of equipment and storage and handling hardware. The hardcover edition includes a bonus CD-ROM of Cleaning Technology in Semiconductor Device Manufacturing 1989?2007: Proceedings from the ECS Semiconductor Cleaning Symposia 1?10. This bonus material is not available with the PDF edition.

Provides an In-depth discussion of surface conditioning for semiconductor applications The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching. Topics covered in this new reference include: Front end line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation Formulation development practices, methodology and a new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and water bonding, as well as the filtering and recirculating of chemicals including reuse and recycling Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications is a valuable resource for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible reference.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.