Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.

This book will address the application of gas phase thin film methods, including techniques such as evaporation, sputtering, CVD, and ALD to the synthesis of materials on nanostructured and high aspect-ratio high surface area materials. We have chosen to introduce these topics and the different application fields from a chronological perspective: we start with the early concepts of step coverage and later conformality in semiconductor manufacturing, and how later on the range of application branched out to include others such as energy storage, catalysis, and more broadly nanomaterials synthesis. The book will describe the ballistic and continuum descriptions of gas transport on nanostructured materials and then will move on to incorporate the impact of precursor-surface interaction. We will finally conclude approaching the subjects of feature shape evolution and the connection between nano and reactor scales and will briefly present different advanced algorithms that can be used to effectively compute particle transport, in some cases borrowing from other disciplines such as radiative heat transfer. The book gathers in a single place information scattered over thirty years of scientific research, including the most recent results in the field of Atomic Layer Deposition. Besides a mathematical description of the fundamentals of thin film growth in nanostructured materials, it includes analytic expressions and plots that can be used to predict the growth using gas phase synthesis methods in a number of ideal approximations. The focus on the fundamental aspects over particular processes will broaden the appeal and the shelf lifetime of this book. The reader of this book will gain a thorough understanding on the coating of high surface area and nanostructured materials using gas phase thin film deposition methods, including the limitations of each technique. Those coming from the theoretical side will gain the knowledge required to model the growth process, while those readers more interested in the process development will gain the theoretical understanding will be useful for process optimization.

"Atomic layer deposition (ALD) has been widely used for thin film coating and metal nanoparticles (NPs) preparation. In this report, the applications of ALD prepared nanostructured materials in catalysis were examined. Highly dispersed Pt monometallic catalysts with different substrates and multi-walled carbon nanotubes (MWCNTs) supported Pt-Co bimetallic catalysts were synthesized by ALD for selective hydrogenation of [alpha], [beta]-unsaturated aldehydes to unsaturated alcohols (UA). Pt/MWCNTs showed the highest selectivity of UA in selective hydrogenation of citral, as compared to Pt/SiO2, Pt/ALD-Al2O3, and Pt/[gamma]-Al2O3. After adding Co, the highest selectivity was achieved with high conversion in hydrogenation of both cinnamaldehyde and citral over an optimized Pt-Co/MWCNTs catalyst. Highly dispersed Pt-Co/MWCNTs bimetallic catalysts were also used for hydrogenolysis of 5-hydroxymethylfurfural (HMF) to 2,5-dimethylfuran (DMF) reaction. High yield of DMF (> 90%) was achieved in hydrogenolysis of HMF over an optimized Pt-Co/MWCNTs catalyst after 8 hr of reaction time under mild conditions. Fe NPs and single atoms were deposited on various substrates via ALD. Fe/SiO2 NPs showed a high activity in CO oxidation reaction with a long-term stability at high temperature. The TiO2 NPs deposited with Fe single atoms showed the highest activity and had an up to six-fold photocatalytic activity enhancement over pure TiO2. CeO2 ALD and ZrO2 ALD were also applied on TiO2 to boost the photocatalytic activity of TiO2, and both two methods improved the photocatalytic efficiency of TiO2 significantly"--Abstract, page iv.

A fundamental part of modern technology is composed of devices that use special materials as main components. Since the last few decades of the last century and even more recently, a remarkable development has been achieved in new micro- and nanostructured materials with compositional structures and production methods that open unprecedented technological, economic, and ecological perspectives due to high yields, economies of scale, the possibility of reducing weight and size, and the low environmental impact of the equipment that contains them. This book offers a collection of excellent studies that use state-of-the-art methodologies developed by professional researchers from different countries in diverse areas of materials. In this way, this book is particularly useful to academics, scientists, practicing researchers, and postgraduate students whose work relates to the latest nanomaterial technologies.

"Atomic/molecular layer deposition (ALD/MLD) has emerged as an important technique for depositing thin films in both scientific research and industrial applications. In this dissertation, ALD/MLD was used to create novel nanostructures for two different applications, catalysis and lithium-ion batteries. MLD was used to prepare ultra-thin dense hybrid organic/inorganic polymer films. Oxidizing the hybrid films removed the organic components and produced the desired nanoporous films. Both porous alumina and titania films can be prepared by such a way. A novel nanostructured catalyst (Pt/SiO2) with an ultra-thin porous alumina shell obtained from the thermal decomposition of an aluminium alkoxide film deposited by MLD for size-selective reactions was developed. The molecular sieving capability of the porous metal oxide films was verified by examining the liquid-phase hydrogenation of n-hexene versus cis-cyclooctene. For lithium-ion battery cathodes, two different approaches are presented. Firstly, ultrathin and highly-conformal conductive CeO2 films were coated on LiMn2O4 particles using ALD process. The initial capacity of the 3 nm CeO2-coated sample showed 24% increment compared to the capacity of the uncoated one, and 96% and 95% of the initial capacity was retained after 1,000 cycles with 1C rate at room temperature (RT) and 55 °C, respectively. The study of ionic and electronic conductivities of the coated and uncoated materials helped explain the improved performance of CeO2 coated materials. Secondly, iron oxide films were deposited using ALD on LiMn[sub 1.5]Ni[sub 0.5]O4 particles for the synergetic effect of performance enhancing by iron doping and conformal iron oxide film coating. With an optimal film thickness of ~0.6 nm, the initial capacity improved by 25% at RT and by ~26% at 55 °C at 1C cycling rate. The synergy of doping of LiMn[sub 1.5]Ni[sub 0.5]O4 with Fe near surface combined with the conductive and protective nature of the optimal iron oxide film led to high capacity retention (~93% at RT and ~91% at 55 °C) even after 1,000 cycles at 1C cycling rate"--Abstract, page iv.

Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.

Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements within the energy conversion field, and researchers in energy conversion to become acquainted with the opportunities offered by ALD. With its main focus on applications of ALD for photovoltaics, electrochemical energy storage, and photo- and electrochemical devices, this is important reading for materials scientists, surface chemists, electrochemists, electrotechnicians, physicists, and those working in the semiconductor industry.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

This concise reference summarizes the latest results in nano-structured thin films, the first to discuss both deposition methods and electronic applications in detail. Following an introduction to this rapidly developing field, the authors present a variety of organic and inorganic materials along with new deposition techniques, and conclude with an overview of applications and considerations for their technology deployment.

Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials