This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Fuji Chimera Research Institute?fs 2005 report on flat panel display materials illuminates the current state and future outlook of electronic display devices by size and application. This report is the culmination of hundreds of interviews with executives and engineers for the purpose of identifying industry trends.More than 50 categories of material are examined, ranging from high margin products such as glass substrates, polarizers, and driver chips, to more exotic light control films and plasma barrier ribs. Each category?fs 4-6 pages worth of data and analysis comprise a comprehensive study of the strategic details for each material. Find out about the latest products and manufacturing technologies in the ever-evolving FPD industry.

This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.

This book brings together detailed discussions by leading experts on the various innovative aspects of thin films growth, deposition and characterization techniques, and new thin film materials and devices. It addresses through the different viewpoints of the contributors, the major problem of thin films science - the relation between the energy of the condensing species and the resulting properties of the films. Some of the issues considered include energetic condensation, bombardment stabilization, pulsed electron beam ablation, orientation and self-organization of organic, ferroelectric and nanoparticle thin films. Several chapters focus on applications such as the recent developments in organic optoelectronics, large area electronic technology and superconducting thin film devices.

Electrochemistry is the branch of chemistry that deals with the chemical action of electricity and the production of electricity by chemical reactions. In a world short of energy sources yet long on energy use, electrochemistry is a critical component of the mix necessary to keep the world economies growing. Electrochemistry is involved with such important applications as batteries, fuel cells, corrosion studies, hydrogen energy conversion, bioelectricity. Research on electrolytes, cells, and electrodes is within the scope of this old but extremely dynamic field. This new book gathers leading research from throughout the world.

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.