"Based on more than fifty diaries of Jewish Holocaust victims of all ages, written while the events described were actually taking place". -- Jacket.

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. - Broad review of optoelectronic applications of III-V nitrides

Handbook of Radioactivity Analysis describes the preparation of samples from a wide variety of matrices, assists the investigator or technician in the selection and use of appropriate radiation detector, and presents the latest state-of-the-art computerized and automated methods of analysis. The new Handbook of Radioactivity Analysis is suitable as a teaching text for university and professional training courses. Of interest to those working in a wide spectrum of disciplines, including: scientists, engineers, physicians, and technicians involved with the preparation, utilization, or disposal of radioactive materials and the measurement of radioactivity in the environment. - New, expanded and updated edition with three additional chapters - Provides modern procedures and guidelines for the analysis of natural and man-made environmental radionuclides - Includes up-to-date detailed sample preparation techniques for soil, air, plant, water, biological tissue, filter material, gels, surface swipes, etc. - Provides practical information for radioactivity monitoring, spectrometric analysis, and radiation dosimetry - Covers state-of-the-art high sample throughput microplate analysis techniques and multi-detector scintillation proximity analysis - Presents the latest methods of rapid electronic radionuclide imaging - Written by twenty-five experts from eight countries. Over 2,000 literature references

Acoustic emission (AE) is one of the most important non-destructive testing (NDT) methods for materials, constructions and machines. Acoustic emission is defined as the transient elastic energy that is spontaneously released when materials undergo deformation, fracture, or both. This interdisciplinary book consists of 17 chapters, which widely discuss the most important applications of AE method as machinery and civil structures condition assessment, fatigue and fracture materials research, detection of material defects and deformations, diagnostics of cutting tools and machine cutting process, monitoring of stress and ageing in materials, research, chemical reactions and phase transitions research, and earthquake prediction.

Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.