Advanced Modeling Of Silicon Germanium Heterojunction Bipolar Transistors
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Author |
: Andreas Pawlak |
Publisher |
: Tudpress Verlag Der Wissenschaften Gmbh |
Total Pages |
: 244 |
Release |
: 2015-10-14 |
ISBN-10 |
: 395908028X |
ISBN-13 |
: 9783959080286 |
Rating |
: 4/5 (8X Downloads) |
Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Author |
: Niccolò Rinaldi |
Publisher |
: CRC Press |
Total Pages |
: 377 |
Release |
: 2022-09-01 |
ISBN-10 |
: 9781000794403 |
ISBN-13 |
: 1000794407 |
Rating |
: 4/5 (03 Downloads) |
Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author |
: Raminderpal Singh |
Publisher |
: John Wiley & Sons |
Total Pages |
: 368 |
Release |
: 2004-03-15 |
ISBN-10 |
: 9780471660910 |
ISBN-13 |
: 0471660914 |
Rating |
: 4/5 (10 Downloads) |
Synopsis Silicon Germanium by : Raminderpal Singh
"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Author |
: Staffan Bruce |
Publisher |
: |
Total Pages |
: 0 |
Release |
: 1999 |
ISBN-10 |
: 9155445586 |
ISBN-13 |
: 9789155445584 |
Rating |
: 4/5 (86 Downloads) |
Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Staffan Bruce
Author |
: Peter Ashburn |
Publisher |
: John Wiley & Sons |
Total Pages |
: 286 |
Release |
: 2004-02-06 |
ISBN-10 |
: 9780470090732 |
ISBN-13 |
: 0470090731 |
Rating |
: 4/5 (32 Downloads) |
Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author |
: Michael Reisch |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 671 |
Release |
: 2012-12-06 |
ISBN-10 |
: 9783642559006 |
ISBN-13 |
: 364255900X |
Rating |
: 4/5 (06 Downloads) |
Synopsis High-Frequency Bipolar Transistors by : Michael Reisch
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author |
: Xiaodi Jin |
Publisher |
: |
Total Pages |
: 0 |
Release |
: 2024 |
ISBN-10 |
: OCLC:1453497862 |
ISBN-13 |
: |
Rating |
: 4/5 (62 Downloads) |
Synopsis Characterization and Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors from Room to Cryogenic Temperatures by : Xiaodi Jin
Author |
: William E. Ansley |
Publisher |
: |
Total Pages |
: 178 |
Release |
: 1998 |
ISBN-10 |
: OCLC:40697047 |
ISBN-13 |
: |
Rating |
: 4/5 (47 Downloads) |
Synopsis Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors by : William E. Ansley
Author |
: John D. Cressler |
Publisher |
: Artech House |
Total Pages |
: 592 |
Release |
: 2003 |
ISBN-10 |
: 1580535992 |
ISBN-13 |
: 9781580535991 |
Rating |
: 4/5 (92 Downloads) |
Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Author |
: John D. Cressler |
Publisher |
: CRC Press |
Total Pages |
: 189 |
Release |
: 2018-10-03 |
ISBN-10 |
: 9781351834766 |
ISBN-13 |
: 1351834762 |
Rating |
: 4/5 (66 Downloads) |
Synopsis Measurement and Modeling of Silicon Heterostructure Devices by : John D. Cressler
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.