Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

This book provides an in-depth overview of design and implementation of leakage reduction techniques. The focus is on applicability, technology dependencies, and scalability. The book mainly deals with circuit design but also addresses the interface between circuit and system level design on the one side and between circuit and physical design on the other side.

This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.

This is the first book to comprehensively record the authors’ authoritative knowledge and practical experience of IC manufacturing, including the tremendous developments of recent years. With its strong application orientation, this is a must-have book for professionals in semiconductor industries.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk.ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support.This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.