This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Machine learning and artificial intelligence are already widely applied to facilitate our daily lives, as well as scientific research, but with the world currently facing a global COVID-19 pandemic, their capacity to provide an important tool to support those searching for a way to combat the novel corona virus has never been more important. This book presents the proceedings of the International Conference on Machine Learning and Intelligent Systems (MLIS 2020), which was due to be held in Seoul, Korea, from 25-28 October 2020, but which was delivered as an online conference on the same dates due to COVID-19 restrictions. MLIS 2020 was the latest in a series of annual conferences that aim to provide a platform for exchanging knowledge about the most recent scientific and technological advances in the field of machine learning and intelligent systems. The annual conference also strengthens links within the scientific community in related research areas. The book contains 53 papers, selected from more than 160 submissions and presented at MLIS 2020. Selection was based on the results of review and scored on: originality, scientific/practical significance, compelling logical reasoning and language. Topics covered include: data mining, image processing, neural networks, human health, natural language processing, video processing, computational intelligence, expert systems, human-computer interaction, deep learning, and robotics. Offering a current overview of research and developments in machine learning and artificial intelligence, the book will be of interest to all those working in the field.

NANODEVICES FOR INTEGRATED CIRCUIT DESIGN Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily. Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.

Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.

This book discusses the scope of science education research and practice in Asia. It is divided into five sections: the first consists of nine chapters providing overviews of science education in Asia (China, Lebanon, Macau, Malaysia, Mongolia, Oman, Singapore, Taiwan, and Thailand). The second section offers chapters on content analysis of research articles, while the third includes three chapters on assessment and curriculum. The fourth section includes four chapters on innovative technology in science education; and the fifth section consists of four chapters on professional development, and informal learning. Each section also has additional chapters providing specific comments on the content. This collection of works provides readers with a starting point to better understand the current state of science education in Asia.

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Step by step illustrated tutorials are supported by a focused commentary. The examples are designed to proceed from starting to model through model finishing to putting models to work within projects and presentation. The book shows both - the entire flow of asset creation and granular methodology. This book will appeal to anyone interested in 3D modeling who wants to improve their speed modeling ability, particularly artists whose work is relevant to industries where hard surface modeling or model prototyping is required, such as games, films, or visualization.