This book presents the author's view of how the global semiconductor industry will evolve, based on recent megatrends not only in the industry but also in society, including the rapid proliferation of AI, the global semiconductor shortage, the rising importance of semiconductors in the value chain, and the movement to democratize semiconductors. It describes and explains major transformations taking place in the industry as a result, which necessitate significant changes not only to its technology but also its economic model and industrial structure. Finally, the book elaborates on the author's theory of super-evolution of semiconductors that will lead to the success of the industry in the emerging knowledge-based digital society. This book is a translation of an original German edition. The translation was done with the help of artificial intelligence (machine translation by the service DeepL.com).

E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.

The purpose of this book is to illustrate the magnificence of the fabless semiconductor ecosystem, and to give credit where credit is due. We trace the history of the semiconductor industry from both a technical and business perspective. We argue that the development of the fabless business model was a key enabler of the growth in semiconductors since the mid-1980s. Because business models, as much as the technology, are what keep us thrilled with new gadgets year after year, we focus on the evolution of the electronics business. We also invited key players in the industry to contribute chapters. These "In Their Own Words" chapters allow the heavyweights of the industry to tell their corporate history for themselves, focusing on the industry developments (both in technology and business models) that made them successful, and how they in turn drive the further evolution of the semiconductor industry.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.

This book covers power electronics, in depth, by presenting the basic principles and application details, which can be used both as a textbook and reference book. Introduces a new method to present power electronics converters called Power Blocks Geometry (PBG) Applicable for courses focusing on power electronics, power electronics converters, and advanced power converters Offers a comprehensive set of simulation results to help understand the circuits presented throughout the book

Provides a timely overview of basic principles and significant advances of semiconductor-based photocatalysts for solar energy conversion Semiconductor Solar Photocatalysts: Fundamentals and Applications presents a systematic, in-depth summary of both fundamental and cutting-edge research in novel photocatalytic systems. Focusing on photocatalysts with vast potential for efficient utilization of solar energy, this up-to-date volume covers heterojunction systems, graphene-based photocatalysts, organic semiconductor photocatalysts, metal sulfide semiconductor photocatalysts, and graphitic carbon nitride-based photocatalysts. Organized into six chapters, the text opens with a detailed introduction to the history, design principles, modification strategies, and performance evaluation methods of solar energy photocatalysis. The remaining chapters provide detailed discussion of various novel photocatalytic systems such as direct Z-scheme and S-scheme photocatalysts, organic polymers, and covalent organic frameworks. This authoritative resource: Explains the essential concepts of solar energy photocatalysis and heterojunction systems for photocatalysis Reviews interesting structures and new applications of semiconductor photocatalysts Features contributions from an international panel of leading researchers in the field Includes extensive references and numerous tables, figures, and color illustrations Semiconductor Solar Photocatalysts: Fundamentals and Applications is valuable resource for all catalytic chemists, materials scientists, inorganic and physical chemists, chemical engineers, and physicists working in the semiconductor industry.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.