This textbook is for graduate students and young scientists, who are looking for an introduction to the physics and physical chemistry of crystal growth and nucleation phenomena.

Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space

This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

“This book contains overviews on technologically important classes of glasses, their treatment to achieve desired properties, theoretical approaches for the description of structure-property relationships, and new concepts in the theoretical treatment of crystallization in glass-forming systems. It contains overviews about the state of the art and about specific features for the analysis and application of important classes of glass-forming systems, and describes new developments in theoretical interpretation by well-known glass scientists. Thus, the book offers comprehensive and abundant information that is difficult to come by or has not yet been made public.” Edgar Dutra Zanotto (Center for Research, Technology and Education in Vitreous Materials, Brazil) Glass, written by a team of renowned researchers and experienced book authors in the field, presents general features of glasses and glass transitions. Different classes of glassforming systems, such as silicate glasses, metallic glasses, and polymers, are exemplified. In addition, the wide field of phase formation processes and their effect on glasses and their properties is studied both from a theoretical and experimental point of view.

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Presented in two parts, this first comprehensive overview addresses all aspects of energetic ion irradiation of polymers. Earlier publications and review articles concentrated on selected topics only. And the need for such a work has grown with the dramatic increase of research and applications, such as in photoresists, waveguides, and medical dosimetry, during the last decade. The first part, Fundamentals of Ion Irradiation of Polymers covers the physical, chemical and instrumental fundamentals; treats the specific irradiation mechanisms of low- and high-energy ions (including similarities and differences); and details the potential for future technological application. All the new findings are carefully analyzed and presented in a systematic way, while open questions are identified.

The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

This is the first complete overview of the present state of the art of flexible barrier materials such as textile, paper and leather, including methods for barrier evaluation. It will be of interest to readers in industries, consumers, and members of the scientific community. The scope of the field is clearly delineated here for the first time, and it deals with a number of specific topics such as barrier to fire and antibacterial properties.

Overview of diffraction methods applied to the analysis of the microstructure of materials. Since crystallite size and the presence of lattice defects have a decisive influence on the properties of many engineering materials, information about this microstructure is of vital importance in developing and assessing materials for practical applications. The most powerful and usually non-destructive evaluation techniques available are X-ray and neutron diffraction. The book details, among other things, diffraction-line broadening methods for determining crystallite size and atomic-scale strain due, e.g. to dislocations, and methods for the analysis of residual (macroscale) stress. The book assumes only a basic knowledge of solid-state physics and supplies readers sufficient information to apply the methods themselves.