Materials Science and Technology Series: Synthetic Modulated Structures focuses on synthetic modulated structures, which is described as any periodically perturbed materials with a repetition greater than the basic unit cell dimension. The book is organized into three parts. Part I provides a perspective of developments and structural characterization of the semiconductor and metal area. The electronic properties in different configurations and structures, including compositional and doping modulation are covered in Part II. Part III begins with preparation methods, followed by a discussion on distinctive fields of interest in metals, transport and magnetic properties, superconductivity, and diffusion. This publication is a good source for students and researchers conducting work in the general area of modulated structures.

The proceedings present the latest achievements in one dimensional materials as presented at the 4th international conference on one-dimensional nanomaterials. The scope of the proceedings covers the inventions in controllable synthesis, structure and property characterizations, nanodamage, modeling and simulation, device fabrication and novel applications of 1D nanomaterials, such as electro-optical devices, electro-mechanical devices, bio-sensors and solar cells, etc.

Proceedings of the NATO Advanced Study Institute on Modulated Structure Materials, Maleme-Chania, Greece, June 15-25, 1983

Controlling turbulence is an important issue for a number of technological applications. Several methods to modulate turbulence are currently being investigated. This book describes various aspects of turbulence structure and modulation, and explains and discusses the most promising techniques in detail.

Solid oxide cells (SOCs) are regarded as a promising energy technology due to their large current density, diverse range of fuels, and high energy conversion efficiency. The double perovskite Sr2FeMoO6 (SFM) has attracted considerable attention for SOCs due to its tunable structure with superior performance of high conductivity, excellent thermal stability, and remarkable carbon deposition resistance in a reducing atmosphere. However, the electrocatalytic activity of SFM is considerably lower than that of commercial Ni-based SOC electrodes. A timely summary of the synthesis, modulation, and application of SFM perovskites is of great significance for its further development for SOCs. In this review, the methods employed in the preparation of SFM electrocatalysts are introduced first. Then, the advancements in the application of different SFM-based electrocatalysts in the field of SOCs are reviewed, and the research progress in the in-situ exsolution of SFM-based electrocatalysts through ion regulation is assessed. Finally, the future issues associated with SFM-based electrocatalysts are addressed in the realm of electrocatalysis, to advance their application.

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.