March 15th, Earth Year 2290 The day the aliens returned. The memories are still fresh. Of colonies burning. Of millions dying in agony. 50 years later, we've built up our strength. Using a wormhole, we colonized both sides of the galaxy. It was the worst mistake we could have made. Our enemy has returned. The wormhole has collapsed.

This book offers an insight into the insulation failures in GIS/GIL and provides practical guidance for improving the insulation reliability of epoxy-based spacers. High voltage gas-insulated apparatuses, including gas-insulated switchgears (GIS) and transmission lines (GIL), playing an important role in the global power transmission system. Epoxy-based spacers are key components in GIS/GIL, playing the role of electrical insulation and mechanical support. However, insulation failures frequently occur around the epoxy-based spacers, threatening the safe operation of the electric power system. Three topics make up this book, with seven to nine chapters in each topic. In the first topic, the surface charging and discharging behaviors of epoxy-based spacers are discussed to deepen the readers’ understanding on the insulation problems in GIS/GIL. And the insulation breakdown of epoxy-based spacers is found to be closely related to the electric field distortion under complex operating conditions. In the second topic, original researches on the surface functionally graded materials (SFGM) are presented for relaxing the electric field distortion around the epoxy-based spacers in both AC and DC GIS/GIL, and a series of optimization methods and fabrication techniques for the SFGM spacers are introduced and discussed. In the last topic, the nonlinear conductivity materials (NCM), also known as self-adaptive materials or intelligent materials, are applied as coatings to adaptively regulate the electric field distributions along the surfaces of the epoxy-based spacers. Besides, the concept of the multi-dimensional functionally graded materials (MFGM) is proposed to uniform the electric field distributions in DC GIS/GIL under stationary and transient voltages, exhibiting great potential in the future application.

This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

Jack knows who belongs out in the Black. And who doesn't -- until Kit comes walking into the pub and changes everything he believes about the Black, about the people who live there, about what it takes to be a human being. Margaret Bechard had set out to write an adventure story with laser guns and spaceships. Then, she says, "there was a big step and a long fall off a cliff while I realized that my characters didn't want to do the stuff I had in my mind; they had plans of their own." The result: Spacer and Rat, a fast-paced space adventure and a short story about human feeling and growing up -- science fiction for those who love SF; riveting fiction for those who don't.

The University of Colorado and the National Bureau of Standards have once again served as hosts for the Cryogenic Engineering Conference in Boulder, Colorado. In presenting the papers of this twelfth annual meeting, the 1966 Cryogenic Engineering Conference Committee has again recognized the excellent cooperation which has existed between these two organizations over the past decade with regard to both cryogenic research and conference activity. This cooperation was demonstrated not only at the 1966 Cryogenic Engineering Conference but also at the International Institute of Refrigeration, Commission I Meeting, which was also hosted by these two organizations immediately following the Cryogenic Engineering Conference. These two meetings have provided attendees with one of the most comprehensive coverages of cryogenic topics that has ever been presented at one location. Emphasis on major international advances in helium technology at the International Institute of Refrigeration, Commission I Meeting has been possible largely through the National Science Foundation Grant GK 1116 to the University of Colorado. The Cryogenic Engineering Conference Committee gratefully acknowledges this support because of its valuable international contribution to the Cryogenic Engineering Conference. As in the past, the Cryogenic Engineering Conference Committee is grateful for the continued assistance of all the dedicated workers in the cryogenic field who have contributed their time reviewing the preliminary papers for the program and the final manuscripts for this volume.

This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.