The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.

This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.

Challenges facing the implementation of an affordable tunable RF and microwave device technology are discussed in these papers from an April 2002 meeting. Materials issues and devices are examined, with information on new tunable materials, issues of preparation and optimization of bulk and think film properties, material and surface characterization, evaluation of material loss and loss mechanisms, and effects of microstructure. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna. Tidrow is affiliated with the US Army Research Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR

The past decade has seen an explosive growth of interest in the physics of granular materials. Granular media are comprised of macroscopic objects with internal degrees of freedom. Granular assemblies exhibit phenomena that incorporate the properties of traditional solids, liquids and gases, making it a unique state. In many ways, the granular state is a generalized state of matter. This new volume from the Materials Research Society brings together researchers from many countries and disciplines to assess issues and problems concerned with the collective behavior of granular assemblies as encountered in the context of various applications. In particular, these applications include ceramic science, shock propagation and absorption, design and maintenance of stable natural and artificial structures, processing of pharmaceuticals, and self-assembly processes associated with the synthesis of ultrahigh-density magnetic tapes. The volume should be of value to researchers involved in exploring granular material-based technologies, and is expected to stimulate further research in this arena. Topics include: electromagnetic fields; structural issues; flow behavior; and dynamical problems.

This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.

Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.