The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).

This issue of ECS Transactions includes papers based on presentations from the symposium "Processes at the Semiconductor Solution Interface 8," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

Advances in Catalysis

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.