Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.

Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the worldâ€"electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the scientific foundation underlying this technology, and discusses education issues in this multidisciplinary field. The committee recommends a coordinated, focused, and well-funded research program in this area that involves the university, federal laboratory, and industrial sectors of the community. It also points out that because plasma processing is an integral part of the infrastructure of so many American industries, it is important for both the economy and the national security that America maintain a strong leadership role in this technology.

We are at a critical evolutionary juncture in the research and development of low-temperature plasmas, which have become essential to synthesizing and processing vital nanoscale materials. More and more industries are increasingly dependent on plasma technology to develop integrated small-scale devices, but physical limits to growth, and other challenges, threaten progress. Plasma Processing of Nanomaterials is an in-depth guide to the art and science of plasma-based chemical processes used to synthesize, process, and modify various classes of nanoscale materials such as nanoparticles, carbon nanotubes, and semiconductor nanowires. Plasma technology enables a wide range of academic and industrial applications in fields including electronics, textiles, automotives, aerospace, and biomedical. A prime example is the semiconductor industry, in which engineers revolutionized microelectronics by using plasmas to deposit and etch thin films and fabricate integrated circuits. An overview of progress and future potential in plasma processing, this reference illustrates key experimental and theoretical aspects by presenting practical examples of: Nanoscale etching/deposition of thin films Catalytic growth of carbon nanotubes and semiconductor nanowires Silicon nanoparticle synthesis Functionalization of carbon nanotubes Self-organized nanostructures Significant advances are expected in nanoelectronics, photovoltaics, and other emerging fields as plasma technology is further optimized to improve the implementation of nanomaterials with well-defined size, shape, and composition. Moving away from the usual focus on wet techniques embraced in chemistry and physics, the author sheds light on pivotal breakthroughs being made by the smaller plasma community. Written for a diverse audience working in fields ranging from nanoelectronics and energy sensors to catalysis and nanomedicine, this resource will help readers improve development and application of nanomaterials in their own work. About the Author: R. Mohan Sankaran received the American Vacuum Society’s 2011 Peter Mark Memorial Award for his outstanding contributions to tandem plasma synthesis.

Proceedings of the NATO Advanced Study Institute on Plasma Treatments and Deposition of Polymers, Acquafredda di Maratea, Italy, May 19-June 2, 1996

Plasma Deposition, Treatment, and Etching of Polymers takes a broad look at the basic principles, the chemical processes, and the diagnostic procedures in the interaction of plasmas with polymer surfaces. This recent technology has yielded a large class of new materials offering many applications, including their use as coatings for chemical fibers and films. Additional applications include uses for the passivation of metals, the surface hardening of tools, increased biocompatibility of biomedical materials, chemical and physical sensors, and a variety of micro- and optoelectronic devices. - Appeals to a broad range of industries from microelectronics to space technology - Discusses a wide array of new uses for plasma polymers - Provides a tutorial introduction to the field - Surveys various classes of plasma polymers, their chemical and morphological properties, effects of plasma process parameters on the growth and structure of these synthetic materials, and techniques for characterization - Interests scientists, engineers, and students alike

Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter deposition. However, there are many open questions regarding processes that involve chemical reactions, for example, reactive sputter deposition or plasma enhanced chemical vapor deposition. Much further research is re quired in order to understand the fundamental deposition processes. A sys tematic collection of basic data, some of which may be readily available in other branches of science, for example, reaction cross sections for gases with energetic electrons, is also required. The need for pfasma deposition techniques is felt strongly in industrial applications because these techniques are superior to traditional thin-film deposition techniques in many ways. In fact, plasma deposition techniques have developed rapidly in the semiconductor and electronics industries. Fields of possible application are still expanding. A reliable plasma reactor with an adequate in situ system for monitoring the deposition conditions and film properties must be developed to improve reproducibility and pro ductivity at the industrial level.

This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.