This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si: H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si: H, nature of weak bonds and gap states in a-Si: H, mechanisms for light-induced defect creation in a-Si: H and chalcogenides, quantum phenomena in multilayer fi

This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This book will serve as an excellent reference source for solid state scientists and engineers, and as a useful self-contained introduction to the field for graduate students.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

Solid state physics after solving so successfully many fundamental problems in perfect or slightly imperfect crystals, tried in recent years to attack problems associated with large disorder with the aim to understand the consequences of the lack of the long-range order. Semiconductors are much more changed by disorder than metals or insulators, and appear to be the most suitable materials for fundamental work. Considerable exploratory work on amorphous and liquid semiconductors was done by the Leningrad School since the early fifties. In recent years, much research in several countries was directed to deepen the understanding of the structural, electronic, optical, vibrational, magnetic and other proper ties of these materials and to possibly approach the present level of under standing of crystalline semiconductors. This effort was stimulated not only by purely scientific interest but also by the possibility of new applications from which memory devices in the general sense are perhaps the most challenging. The research met with serious difficulties which are absent in crystals.

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon ductor group in Japan. A few years ago, we started to organize an interna tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.

This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages. - Provides information on the most used spectroscopic techniques - Discusses the advantages and disadvantages of each technique

This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.

This book is an account of the manner in which the optical phenomena observed from solids relate to their fundamental properties. Written at the graduate level, it attempts a threefold purpose: an indication of the breadth of the subject, an in-depth examination of important areas, and a text for a two-semester course. The first two chapters present introductory theory as a foundation for subsequent reading. The following ten chapters broadly concern electronic properties associated with semiconductors ranging from narrow to wide energy gap materials. Lattice properties are examined in the remaining chap ters, in which effects governed by phonons in perfect crystals, point defects, their vibrational and electronic spectra, and electron-phonon interactions are stressed. Fun and hard work, both in considerable measure, have gone into the preparation of this volume. At the University of Freiburg, W. Germany, from August 7-20, 1966, the occasion of a NATO Advanced Study Institute on "The Optical Properties of Solids," the authors of these various chapters lectured for the Institute; this volume provides essentially the "Proceed ings" of that meeting. Many major revisions of original lectures (contrac tions and enlargements) were required for better organization and presentation of the subject matter. Several abbreviated chapters appear mainly to indicate the importance of their contents in optical properties research and to indicate recently published books that provide ample coverage. We are indebted to many people: the authors for their efforts and patience; our host at the University of Freiburg, the late Professor Dr.