The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.

Front cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover

This book presents a synthesis of the research carried out in the Laboratory of Signal Processing and Communications (LaPSyC), CONICET, Universidad Nacional del Sur, Argentina, since 2003. It presents models and techniques widely used by the signal processing community, focusing on low-complexity methodologies that are scalable to different applications. It also highlights measures of the performance and impact of each compensation technique. The book is divided into three parts: 1) basic models 2) compensation techniques and 3) applications in advanced technologies. The first part addresses basic architectures of transceivers, their component blocks and modulation techniques. It also describes the performance to be taken into account, regardless of the distortions that need to be compensated. In the second part, several schemes of compensation and/or reduction of imperfections are explored, including linearization of power amplifiers, compensation of the characteristics of analog-to- digital converters and CFO compensation for OFDM modulation. The third and last part demonstrates the use of some of these techniques in modern wireless-communication systems, such as full-duplex transmission, massive MIMO schemes and Internet of Things applications.

This tenth volume concentrates on three topics: scalable analogue circuits; high-speed D/A converters; and RF power amplifiers. Each topic is covered by six papers, written by an expert on that particular topic.

This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques. Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.