We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.

Eine Einführung in das Gebiet der optoelektronischen pn-Halbleiterbauelemente aus den Blickwinkeln der Materialeigenschaften, der Funktionsprinzipien, der Herstellung und Verpackung, der Zuverlässigkeit und der Anwendung. Das Buch ist für Anfänger gedacht, daher sind die Erläuterungen in geeigneter Weise vereinfacht und theoretische Grundlagen wurden zugunsten anwendungsspezifischer Aspekte zum Teil übersprungen. (12/98)

The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.

This book deals with microwave electronics, that is to say those components of microwave circuits that generate, amplify, detect or modulate signals. It is based on a course given in the Electrical Engineering Department of Eindhoven University since 1985 and on about twenty years of experience in the microwave field. Somewhat to my surprise I found that there were hardly any textbooks that addressed the specific properties and demands of microwave devices, including vacuum devices and their interactions with circuits. Numerous books exist on semiconductor electronic devices, dealing in an excellent way with the basic device physics, but being somewhat brief on typical micro wave aspects. On the other hand there are also many books that concentrate on electromagnetic theory and passive circuits, treating devices without reference to the underlying physics. In between there are some entirely devoted to a particular device, for example, the GaAs MESFET. With regard to tubes the situation is even worse: books that treat the basic principles are usually quite old and modern books often concentrate on specific devices, like high power tubes. So it seems that there is room for a book like this one. Its aim is to provide an elementary understanding ofmicrowave electronic devices, both vacuum and semiconductor, on the one hand in relation to the basic physics underlying their operation and on the other in relation to their circuit applications.

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Joseph F. White has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications. He is thoroughly grounded in the physics and math ematics of the field, but has primarily the engineer's viewpoint, combining basic knowledge with experience and ingenuity to gen erate practical designs under constraints of required performance and costs of development and production. As a result of his teach ing experience and numerous technical papers and oral presenta tions, he has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook. Dr. White believes that an engineer must have a good understand ing of semiconductor physics, a thorough knowledge of microwave circuit theory, at least an elementary acquaintance with transistor drivers, and the ability to check and refine a microwave circuit on a computer terminal to be qualified for modern, creative design of microwave semiconductor control components. These subjects are well covered in approximately the first half of the book; the second half treats the general and specific design of switches, at tenuators, limiters, duplexers, and phase shifters, with many ex amples drawn from his experience and that of others.

Microwave Devices, Circuits and Subsystems for Communications Engineering provides a detailed treatment of the common microwave elements found in modern microwave communications systems. The treatment is thorough without being unnecessarily mathematical. The emphasis is on acquiring a conceptual understanding of the techniques and technologies discussed and the practical design criteria required to apply these in real engineering situations. Key topics addressed include: Microwave diode and transistor equivalent circuits Microwave transmission line technologies and microstrip design Network methods and s-parameter measurements Smith chart and related design techniques Broadband and low-noise amplifier design Mixer theory and design Microwave filter design Oscillators, synthesisers and phase locked loops Each chapter is written by specialists in their field and the whole is edited by experience authors whose expertise spans the fields of communications systems engineering and microwave circuit design. Microwave Devices, Circuits and Subsystems for Communications Engineering is suitable for senior electrical, electronic or telecommunications engineering undergraduate students, first year postgraduate students and experienced engineers seeking a conversion or refresher text. Includes a companion website featuring: Solutions to selected problems Electronic versions of the figures Sample chapter

Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.

Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.