The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Challenges facing the implementation of an affordable tunable RF and microwave device technology are discussed in these papers from an April 2002 meeting. Materials issues and devices are examined, with information on new tunable materials, issues of preparation and optimization of bulk and think film properties, material and surface characterization, evaluation of material loss and loss mechanisms, and effects of microstructure. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna. Tidrow is affiliated with the US Army Research Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

This volume, the sixth in a continuing series, presents cutting edge multidisciplinary work on the characterization of ancient materials; the technologies of selection, production and usage by which materials are transformed into objects and artifacts; the science underlying their deterioration, preservation and conservation; and sociocultural interpretation derived from an empirical methodology of observation, measurement and experimentation. Preserving cultural heritage extends beyond artifact preservation to developing a critical understanding of how ancient people used technology and craft to solve problems of survival and organization and to make symbols or representations of what was important in their world, especially for its maintenance, longevity and beautification. Of particular interest in this volume are contributions which explore the interface and overlap among traditional materials science, the history of technology and the archaeological and conservation sciences, or that investigate new methods and applications of materials science in art and archaeology. Topics include: conservation and preservation science; preservation-design, characterization and assessment; characterization-new methods and improved techniques; archaeological science and archaeometry; site formation, site analysis, resource survey and organization of technology; weathering, dating, technology and authentication; archaeomaterials, technology and society; replicative experiments, synthesis of materials and model systems; historic technologies; and ancient technology and modern craft.

This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.

Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.

Fifty-seven papers examine the synthesis, characterization, and processing of nanoparticulate materials. Selected from the talks and posters given at the November symposium organized by the Materials Research Society, the papers look at applications in the areas of optics, magnetics, electronics, advanced energy storage, nano- dispersions, and biology. Major topics include methods for production of controlled size and shape of nanoparticles, ability to process nanoparticles to form uniform dispersions, directed assembly of nanoparticles at specific locations, large scale production, and surface control of nanoparticle materials for tailoring of specific properties. Annotation copyrighted by Book News, Inc., Portland, OR