Providing cutting-edge research on nanoelectronics and photonic devices and its application in future integrated circuits, this state-of-the-art book tackles the challenges of the different detailed theoretical and analytical models of solving the problems of various nanodevices. The volume also explores from different angles the roles of material composition and choice of materials that now play the most critical role in determining outcomes of low-dimensional nanoelectronic devices. The applications of those findings are extremely beneficial for the computing and telecommunication industries. Beginning with a solid theoretical background for every chapter, this volume covers the hottest areas of present-day electronic engineering. The continuous miniaturization of devices, components, and systems requires corresponding cutting-edge theoretical analysis supported by simulated findings before actual fabrication. That purpose is given maximum focus in this volume, which has interdisciplinary appeal, making it a comprehensive technological volume that deals with underlying aspects of physics, materials, structures in nano-regime, and the corresponding end-product in the form of devices.

Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly being replaced with carbon-based electronics, devices are being reduced down to nanometer scale, and further potential applications are being considered. While traditionally, engineers are trained by way of physics, chemistry, and mathematics, Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles establishes biology as an essential basic science for engineers to explore. Unifies Science and Engineering: from Quantum Physics to Nanoengineering Drawing heavily on published papers by the author, this research-driven text offers a complete review of nanoelectronic transport starting from quantum waves, to ohmic and ballistic conduction, and saturation-limited extreme nonequilibrium conditions. In addition, it highlights a new paradigm using non-equilibrium Arora’s Distribution Function (NEADF) and establishes this function as the starting point (from band theory to equilibrium to extreme nonequilibrium carrier statistics). The author focuses on nano-electronic device design and development, including carbon-based devices, and provides you with a vantage point for the global outlook on the future of nanoelectronics devices and ULSI. Encompassing ten chapters, this illuminating text: Converts the electric-field response of drift velocity into current–voltage relationships that are driven by the presence of critical voltage and saturation current arising from the unidirectional drift of carriers Applies the effect of these scaled-down dimensions to nano-MOSFET (metal–oxide–semiconductor field-effect transistor) Considers specialized applications that can be tried through a number of suggested projects that are all feasible with MATLAB® codes Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles contains the latest research in nanoelectronics, identifies problems and other factors to consider when it comes to nanolayer design and application, and ponders future trends. Print Versions of this book also include access to the ebook version.

Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Low-Dimensional Nanoscale Electronic and Photonic Devices 4¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic–cell interfaces and other advanced medical applications. The book answers the following questions: • What is different at the nanoscale? • What is new about nanoscience? • What are nanomaterials (NMs)? • What are the fundamental issues in nanomaterials? • Where are nanomaterials found? • What nanomaterials exist in nature? • What is the importance of NMs in our lives? • Why so much interest in nanomaterials? • What is at nanoscale in nanomaterials? • What is graphene? • Are pure low-dimensional systems interesting and worth pursuing? • Are nanotechnology products currently available? • What are sensors? • How can Artificial Intelligence (AI) and nanotechnology work together? • What are the recent advances in nanoelectronic materials? • What are the latest applications of NMs?

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. - Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers - Addresses a range of defects in a variety of systems, providing a comparative approach - Includes sections on advances in theory that provide insights on where this body of research might lead

Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Compris

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book: Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices Includes rigorous mathematical derivations of the semiconductor physics Illustrates major concepts thorough discussions and various diagrams