ISTC/CSTIC is an annual semiconductor technology conference covering all the aspects of semiconductor technology and manufacturing, including devices, design, lithography, integration, materials, processes, manufacturing as well as emerging semiconductor technologies and silicon material applications. ISTC/CSTIC 2009 was merged by ISTC (International Semiconductor Technology Conference) and CSTIC (China Semiconductor Technology International Conference), the two industry leading technical conferences in China, and consisted of one plenary session and nine technical symposia. This issue of ECS Transactions contains 159 papers from the conference.

Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.

The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.

Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics

Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

A twelfth-century poem by the creator of the Arthurian romance describes the courageous exploits and triumphs of a brave lord who tries to win back his deserted wife's love

Binary Rare Earth Oxides is the first book in the field of rare earth oxides that provides coverage from the basic science through to recent advances. This book introduces the unique characteristics of the binary rare earth oxides with their chemistry, physics and applications. It provides a comprehensive review of all the characteristics of rare earth oxides, essential for scientists and engineers involved with rare earths, oxides, inorganic materials, ceramics, and structures. The binary rare earth oxides bring us a variety of interesting characteristics. Understanding their fundamental mechanisms builds a bridge between solid-state chemistry and materials science. The book begins with a brief introduction to binary rare earth oxides, their physical and chemical stabilities, polymorphism, crystal structures and phase transformation and the association with current applications. The book goes on to present the band structure of the oxides using several quantum chemical calculations, which belong to a newly developed area in the binary rare earth oxides. Central to this chapter are the characterizations of electrical, magnetic and optical properties, as well as details of single crystal growth and particle preparation methods that have progressed in recent years. Later chapters concentrate on thermo-chemical properties and trace determination techniques. The final chapter contains a variety of useful applications in various fields such as phosphors, glass abrasives, automotive catalysts, fuel cells, solid electrolytes, sunscreens, iron steels, and biological materials. This book is an invaluable resource for materials scientists and solid-state physicists and chemists with an interest in rare earth oxides, as well as advanced students and graduates who require an approach to familiarize them with this field. This book provides guidance through a comprehensive review of all the characteristics of binary rare earth oxides.

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