Diamond is one of the most technologically and scientifically valuable crystalline solids due to its extraordinary thermal, mechanical, optical, chemical and radiation resistant properties. This uniqueness makes diamond materials of great interest in the field of microelectronics. However, progress in this area has been limited because of difficulties associated with doping, uniformity of polycrystalline films, patterning and inconsistency in reproducibility. For application in electronics, both p- and n-type doping of diamond films must be realized. Both natural and synthetic p-type diamond exists, and boron doping of diamond films (for p-type conductivity) is readily obtainable during chemical vapor deposition. Devices such as field effect transistors and Schottky diodes have been fabricated from such films. However, the development of diamond-based electronic devices has been hindered by the inability to produce reasonably conductive n-type diamond. In this study, we have investigated in situ phosphorus doping of diamond films to obtain n-type conducting diamond films. The diamond films were obtained through hot-filament chemical vapor deposition. The films were identified as good quality polycrystalline diamond through X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The n-type dopant incorporation was established through Secondary Ion Mass Spectroscopy. Both lightly doped (resistive) and heavily doped (well conducting) n-type diamond films were obtained, and their electrical properties were established through Current-Voltage characteristics. The diamond interface characteristics with silicon substrate and metal contacts were studied through Voltage Contrast and Electron Beam Induced Current techniques. Devices such as Schottky diodes were fabricated from these phosphorus doped diamond films. These diamond films were found to be reproducible and their electrical characteristics repeatable, thus, setting a trend towards solving one of the main problems in realizing diamond as a material for the future in the semiconductor industry.

This volume reviews the state of the art of thin film diamond, a very promising new semiconductor that may one day rival silicon as the material of choice for electronics. Diamond has the following important characteristics; it is resistant to radiation damage, chemically inert and biocompatible and it will become "the material" for bio-electronics, in-vivo applications, radiation detectors and high-frequency devices. Thin-Film Diamond is the first book to summarize state of the art of CVD diamond in depth. It covers the most recent results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, applications of diamond in electrochemistry, as detectors, and in surface acoustic wave devices.· Accessible by both experts and non-experts in the field of semi-conductors research and technology, each chapter is written in a tutorial format· Helping engineers to manufacture devices with optimized electronic properties· Truly international, this volume contains chapters written by recognized experts representing academic and industrial institutions from Europe, Japan and the US

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Modern industry imposes ever increasing requirements upon tools and tool materials as to the provision for performance under the conditions of high cutting speeds and dynamic loads as well as under intensive thermal and chemical interactions with workpiece materials. The industry demands a higher productivity in combination with the accuracy of geometry and dimensions of workpieces and quality of working surfaces of the machined pieces. These requirements are best met by the tool superhard materials (diamond and diamond-like cubic boron nitride). Ceramics based on silicon carbide, aluminum and boron oxides as well as on titanium, silicon and aluminum nitrides offer promise as tool materials. Tungsten-containing cemented carbides are still considered as suitable tool materials. Hi- hardness and high strength composites based on the above materials fit all the requirements imposed by machining jobs when manufacturing elements of machinery, in particular those operating under the extreme conditions of high temperatures and loads. These elements are produced of difficult-- machine high-alloy steels, nickel refractory alloys, high-tech ceramics, materials with metallic and non-metallic coatings having improved wear resistance, as well as of special polymeric and glass-ceramic materials. Materials science at high pressure deals with the use of high-pressure techniques for the development and production of unique materials whose preparation at ambient pressure is impossible (e. g. , diamond, cubic boron nitride, etc. ) or of materials with properties exceeding those of materials produced at ambient pressure (e. g. , high-temperature superconductors).

We are pleased to present the Proceedings of the NATO Advanced Research Workshop “Syntheses, Properties and Applications of Ultrananocrystalline Diamond” which was held June 7-10, 2004 in St. Petersburg, Russia. The main goal of the Workshop was to provide a forum for the intensive exchange of opinions between scientists from Russia and NATO countries in order to give additional impetus to the development of the science and applications of a new carbon nanostructure, called ultrananocrystalline diamond (UNCD) composed of 2-5 nm crystallites. There are two forms of UNCD, dispersed particles and films. The two communities of researchers working on these two forms of UNCD have hitherto lacked a common forum in which to explore areas of scientific and technological overlap. As a consequence, the two fields have up to now developed independently of each other. The time had clearly come to remedy this situation in order to be able to take full advantage of the enormous potential for societal benefits to be derived from exploiting the synergistic relationships between UNCD dispersed particulates and UNCD films. The NATO sponsored ARW therefore occurred in a very timely manner and was successful in beginning the desired dialogue, a precondition for making progress toward the above stated goal. The discovery of UNCD completes a triadof nanostructured carbonswhich includes fullerenes and nanotubes.

This book is in honor of the contribution of Professor Xin Jiang (Institute of Materials Engineering, University of Siegen, Germany) to diamond. The objective of this book is to familiarize readers with the scientific and engineering aspects of CVD diamond films and to provide experienced researchers, scientists, and engineers in academia and industry with the latest developments and achievements in this rapidly growing field. This 2nd edition consists of 14 chapters, providing an updated, systematic review of diamond research, ranging from its growth, and properties up to applications. The growth of single-crystalline and doped diamond films is included. The physical, chemical, and engineering properties of these films and diamond nanoparticles are discussed from theoretical and experimental aspects. The applications of various diamond films and nanoparticles in the fields of chemistry, biology, medicine, physics, and engineering are presented.

The exceptional mechanical, optical, surface and biocompatibility properties of nanodiamond have gained it much interest. Exhibiting the outstanding bulk properties of diamond at the nanoscale in the form of a film or small particle makes it an inexpensive alternative for many applications. Nanodiamond is the first comprehensive book on the subject. The book reviews the state of the art of nanodiamond films and particles covering the fundamentals of growth, purification and spectroscopy and some of its diverse applications such as MEMS, drug delivery and biomarkers and biosensing. Specific chapters include the theory of nanodiamond, diamond nucleation, low temperature growth, diamond nanowires, electrochemistry of nanodiamond, nanodiamond flexible implants, and cell labelling with nanodiamond particles. Edited by a leading expert in nanodiamonds, this is the perfect resource for those new to, and active in, nanodiamond research and those interested in its applications.

A comprehensive guide to ultrananocrystalline-diamond (UNCDTM) and thin film technology for implantable and external medical devices, edited by a pioneer in the field. Covering synthesis and properties, clinical applications, and regulation, it is essential reading for researchers and practitioners in materials science and biomedical engineering.