Gaas Feldeffekttransistoren
Download Gaas Feldeffekttransistoren full books in PDF, epub, and Kindle. Read online free Gaas Feldeffekttransistoren ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads.
Author |
: Klaus Heime |
Publisher |
: Wiley-Blackwell |
Total Pages |
: 240 |
Release |
: 1989 |
ISBN-10 |
: UOM:39015013481059 |
ISBN-13 |
: |
Rating |
: 4/5 (59 Downloads) |
Synopsis InGaAs Field-effect Transistors by : Klaus Heime
Author |
: Hans L. Hartnagel |
Publisher |
: Springer Nature |
Total Pages |
: 1554 |
Release |
: 2023-07-28 |
ISBN-10 |
: 9783030941000 |
ISBN-13 |
: 3030941000 |
Rating |
: 4/5 (00 Downloads) |
Synopsis Fundamentals of RF and Microwave Techniques and Technologies by : Hans L. Hartnagel
The increase of consumer, medical and sensors electronics using radio frequency (RF) and microwave (MW) circuits has implications on overall performances if design is not robust and optimized for a given applications. The current and later generation communication systems and Internet of Thing (IoT) demand for robust electronic circuits with optimized performance and functionality, but low cost, size, and power consumption. As a result, there is a need for a textbook that provides a comprehensive treatment of the subject. This book provides state-of-the-art coverage of RF and Microwave Techniques and Technologies, covers important topics: transmission-line theory, passive and semiconductor devices, active and passive microwave circuits and receiver systems, as well as antennas, noise and digital signal modulation schemes. With an emphasis on theory, design, and applications, this book is targeted to students, teachers, scientists, and practicing design engineers who are interested in broadening their knowledge of RF and microwave electronic circuit design. Readers will also benefit from a unique integration of theory and practice, provides the readers a solid understanding of the RF and microwave concepts, active and passive components, antenna, and modulation schemes. Readers will learn to solve common design problems ranging from selection of components, matching networks to biasing and stability, and digital modulation techniques. More importantly, it provides basic understanding in the analysis and design of RF and microwave circuits in a manner that is practiced in industry. This make sure that the know-how learned in this book can be effortlessly and straightway put into practice without any obstacles.
Author |
: James V. DiLorenzo |
Publisher |
: Artech House Publishers |
Total Pages |
: 808 |
Release |
: 1982 |
ISBN-10 |
: UOM:39015004527233 |
ISBN-13 |
: |
Rating |
: 4/5 (33 Downloads) |
Synopsis GaAs FET Principles and Technology by : James V. DiLorenzo
Author |
: J.P. Nougier |
Publisher |
: Elsevier |
Total Pages |
: 523 |
Release |
: 2014-05-27 |
ISBN-10 |
: 9781483295237 |
ISBN-13 |
: 1483295230 |
Rating |
: 4/5 (37 Downloads) |
Synopsis III-V Microelectronics by : J.P. Nougier
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Author |
: Peter Heymann |
Publisher |
: John Wiley & Sons |
Total Pages |
: 516 |
Release |
: 2021-12-02 |
ISBN-10 |
: 9781119859383 |
ISBN-13 |
: 1119859387 |
Rating |
: 4/5 (83 Downloads) |
Synopsis A Guide to Noise in Microwave Circuits by : Peter Heymann
A GUIDE TO NOISE IN MICROWAVE CIRCUITS A fulsome exploration of critical considerations in microwave circuit noise In A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement, a team of distinguished researchers deliver a comprehensive introduction to noise in microwave circuits, with a strong focus on noise characterization of devices and circuits. The book describes fluctuations beginning with their physical origin and touches on the general description of noise in linear and non-linear circuits. Several chapters are devoted to the description of noise measurement techniques and the interpretation of measured data. A full chapter is dedicated to noise sources as well, including thermal, shot, plasma, and current. A Guide to Noise in Microwave Circuits offers examples of measurement problems—like low noise block (LNB) of satellite television – and explores equipment and measurement methods, like the Y, cold source, and 7-state method. This book also includes: A thorough introduction to foundational terms in microwave circuit noise, including average values, amplitude distribution, autocorrelation, cross-correlation, and noise spectra Comprehensive explorations of common noise sources, including thermal noise, the Nyquist formula and thermal radiation, shot noise, plasma noise, and more Practical discussions of noise and linear networks, including narrowband noise In-depth examinations of calculation methods for noise quantities, including noise voltages, currents, and spectra, the noise correlation matrix, and the noise of simple passive networks Perfect for graduate students specializing in microwave and wireless electronics, A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement will also earn a place in the libraries of professional engineers working in microwave or wireless circuits and system design.
Author |
: Raymond Sydney Pengelly |
Publisher |
: Wiley-Blackwell |
Total Pages |
: 668 |
Release |
: 1986 |
ISBN-10 |
: UOM:39015012759000 |
ISBN-13 |
: |
Rating |
: 4/5 (00 Downloads) |
Synopsis Microwave Field-effect Transistors by : Raymond Sydney Pengelly
Author |
: Peter H. Ladbrooke |
Publisher |
: Artech House Microwave Library |
Total Pages |
: 408 |
Release |
: 1989 |
ISBN-10 |
: UOM:39015019477655 |
ISBN-13 |
: |
Rating |
: 4/5 (55 Downloads) |
Synopsis MMIC Design by : Peter H. Ladbrooke
Detailed information on the principles of integrated design required for successful fabrication of MMIC chips at a reasonable cost. It emphasizes CAD techniques and the effects of material variation. The device modelling techniques presented demonstrate the simulation of overall MMIC chip behavior a
Author |
: Pouya Valizadeh |
Publisher |
: John Wiley & Sons |
Total Pages |
: 471 |
Release |
: 2016-02-23 |
ISBN-10 |
: 9781119155492 |
ISBN-13 |
: 1119155495 |
Rating |
: 4/5 (92 Downloads) |
Synopsis Field Effect Transistors, A Comprehensive Overview by : Pouya Valizadeh
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Author |
: Walter Kellner |
Publisher |
: Springer-Verlag |
Total Pages |
: 285 |
Release |
: 2013-03-12 |
ISBN-10 |
: 9783642835766 |
ISBN-13 |
: 3642835767 |
Rating |
: 4/5 (66 Downloads) |
Synopsis GaAs-Feldeffekttransistoren by : Walter Kellner
Aus den Besprechungen: "...Das Buch wendet sich an Ingenieure, Naturwissenschaftler und Studenten, die sich in die Herstellungstechnik und Eigenschaften dieser neuen Bauelemente einarbeiten wollen. Auf Grund der hohen Bedeutung dieser Technik wurde ihr ein eigener Band in der bekannten und bereits an dieser Stelle diskutierten Reihe Halbleiter-Elektronik gewidmet. Vorausgesetzt wird die Kenntnis der Grundlagen der Halbleiter-Elektronik. Die Verfasser sind kompetente Fachleute aus der zentralen Forschung und Entwicklung der Siemens AG München ... Besonders wertvoll ist ein umfangreiches, nach den Kapiteln gegliedertes Literaturverzeichnis, das eine breite Übersicht über das Quellenmaterial und Zusatzliteratur gibt." Elektropraktiker#1 "...Nicht ohne Erfolg haben sich die beiden Autoren die Mühe gegeben, ein Buch zu schreiben, welches sowohl für "alte Hasen" als auch für Studenten geeignet ist. So können z.B. diejenigen, welche über ausreichende Grundlagenkenntnisse verfügen, die zwei ersten Kapitel überspringen, während angehende Wissenschaftler und Ingenieure gerade hier interessante und nützliche Denkanstöße finden werden..." Elektronik#2
Author |
: Heinrich Daembkes |
Publisher |
: Institute of Electrical & Electronics Engineers(IEEE) |
Total Pages |
: 484 |
Release |
: 1991 |
ISBN-10 |
: UOM:39015028443763 |
ISBN-13 |
: |
Rating |
: 4/5 (63 Downloads) |
Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes