Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments—and setbacks—in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development. Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulation, and alternative energy sources. Like the first edition, which became a standard in the field, this volume provides a general introduction to ferroelectrics with theoretical background. It then addresses practical design and device manufacturing, including recently developed processes and applications. Updating old data with a forecast of future developments, the text analyzes improvements to original ferroelectric devices to aid the design process of new ones. The second edition includes new sections on: Pb-free piezoelectrics Size effect on ferroelectricity Electrocaloric devices Micro mass sensor Piezoelectric energy harvesting Light valves and scanners Multi-ferroic devices, including magneto-electric sensors Uchino provides a general introduction to the theoretical background of ferroelectric devices, practical materials, device designs, drive/control techniques, and typical applications. He presents frequently asked questions from students, lab demonstrations for practical understanding, and "check point" quizzes and model solutions to monitor understanding. After a thorough exploration of ferroelectric devices and their past, this book looks to the industry’s future, assessing market size and remaining reliability/lifetime issues. The author also unveils his strategy for developing "best-selling" ferroelectric devices.

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Today’s wireless communications and information systems are heavily based on microwave technology. Current trends indicate that in the future along with - crowaves, the millimeter wave and Terahertz technologies will be used to meet the growing bandwidth and overall performance requirements. Moreover, motivated by the needs of the society, new industry sectors are gaining ground; such as wi- less sensor networks, safety and security systems, automotive, medical, envir- mental/food monitoring, radio tags etc. Furthermore, the progress and the pr- lems in the modern society indicate that in the future these systems have to be more user/consumer friendly, i. e. adaptable, reconfigurable and cost effective. The mobile phone is a typical example which today is much more than just a phone; it includes a range of new functionalities such as Internet, GPS, TV, etc. To handle, in a cost effective way, all available and new future standards, the growing n- ber of the channels and bandwidth both the mobile handsets and the associated systems have to be agile (adaptable/reconfigurable). The complex societal needs have initiated considerable activities in the field of cognitive and software defined radios and triggered extensive research in adequate components and technology platforms. To meet the stringent requirements of these systems, especially in ag- ity and cost, new components with enhanced performances and new functionalities are needed. In this sense the components based on ferroelectrics have greater - tential and already are gaining ground.

Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed by tunable multiband antennas, tunable single- and multiband impedance matching networks and tunable substrate integrated waveguide filters, which are all built on low cost ferroelectric thick-films. For all the above devices, the theoretical analyses, modeling and design methods are elaborated, while through demonstrative prototypes the application potential is evaluated.

Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications

This comprehensive book covers recent developments in advanced dielectric, piezoelectric and ferroelectric materials. Dielectric materials such as ceramics are used to manufacture microelectronic devices. Piezoelectric components have been used for many years in radioelectrics, time-keeping and, more recently, in microprocessor-based devices. Ferroelectric materials are widely used in various devices such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage and display devices.The book is divided into eight parts under the general headings: High strain high performance piezo- and ferroelectric single crystals; Electric field-induced effects and domain engineering; Morphotropic phase boundary related phenomena; High power piezoelectric and microwave dielectric materials; Nanoscale piezo- and ferroelectrics; Piezo- and ferroelectric films; Novel processing and new materials; Novel properties of ferroelectrics and related materials. Each chapter looks at key recent research on these materials, their properties and potential applications.Advanced dielectric, piezoelectric and ferroelectric materials is an important reference tool for all those working in the area of electrical and electronic materials in general and dielectrics, piezoelectrics and ferroelectrics in particular. - Covers the latest developments in advanced dielectric, piezoelectric and ferroelectric materials - Includes topics such as high strain high performance piezo and ferroelectric single crystals - Discusses novel processing and new materials, and novel properties of ferroelectrics and related materials

The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.

This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

This book explores the applications of ferroelectric materials in information technology by developing several prototype devices based on Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals. It describes how an optothermal field-effect transistor (FET) was constructed on the PMN-26PT single crystal, using a MoS2 monolayer as the channel semiconductor material. This fusion of pyroelectric effect and the interface engineering of 2D materials provides an effective strategy for the ‘photon revolution’ of FET. An ultra-broadband photodetector (UV ~ THz) was monolithically integrated into a [111]-oriented PMN-28PT single crystal by using silver nanowires in the transparent top electrode. The photodetector showed a dramatic improvement in operation frequency up to 3 kHz: an order of magnitude higher than that of traditional pyroelectric photodetectors. A self-powered integrated module was demonstrated through the combination of a triboelectric nanogenerator and a ferroelectric FET. The stored information can easily be written in the memory system using mechanical energy, solving the power consumption problem with regard to information writing in ferroelectric nonvolatile memories. This book extends the applications of ferroelectric single crystals into areas other than piezoelectric devices, paving the way for exciting future developments.

This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable crystals and other inorganic materials, as well as organic ferroelectrics (polymers, liquid crystals, and composites). Basic concepts, principles and methods for the physical property characteristics of ferroelectric materials are introduced in the first two chapters for those readers new to the subject of ferroelectricity. Not only professional researchers and engineers but also students and other readers who have limited physical knowledge and an interest in ferroelectrics, will welcome this book.