The book is aimed at assessing the capabilities of state-of-the-art optical techniques in elucidating the fundamental electronic and structural properties of semiconductor and metal surfaces, interfaces, thin layers, and layer structures, and assessing the usefulness of these techniques for optimization of high quality multilayer samples through feedback control during materials growth and processing. Particular emphasis is dedicated to the theory of nonlinear optics and to dynamical processes through the use of pump-probe techniques together with the search for new optical sources. Some new applications of Scanning Probe Microscopy to Material Science and biological samples, dried and in vivo, with the use of different laser sources are also presented. Materials of particular interest are silicon, semiconductor-metal interfaces, semiconductor and magnetic multi-layers and III-V compound semiconductors.

The book is aimed at assessing the capabilities of state-of-the-art optical techniques in elucidating the fundamental electronic and structural properties of semiconductor and metal surfaces, interfaces, thin layers, and layer structures, and assessing the usefulness of these techniques for optimization of high quality multilayer samples through feedback control during materials growth and processing. Particular emphasis is dedicated to the theory of nonlinear optics and to dynamical processes through the use of pump-probe techniques together with the search for new optical sources. Some new applications of Scanning Probe Microscopy to Material Science and biological samples, dried and in vivo, with the use of different laser sources are also presented. Materials of particular interest are silicon, semiconductor-metal interfaces, semiconductor and magnetic multi-layers and III-V compound semiconductors.

The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where "optical" applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these "epioptic" techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 "EPIOPTIC", and CEU DGIII ESPRIT Basic Research Action No. 6878 "EASI". Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required.

This is the proceedings of a workshop which brought together researchers from universities and research institutes who work in the fields of (semiconductor) surface science, epitaxial growth, materials deposition and optical diagnostics relevant to (semiconductor) materials and structures of interest for present and anticipated (spin) electronic devices. The workshop assessed the capabilities of state-of-the-art optical techniques in elucidating the fundamental electronic and structural properties of semiconductor and metal surfaces, interfaces, thin layers, and layer structures, and examined the usefulness of these techniques for optimization of high quality multilayer samples through feedback control during materials growth and processing.

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

The aim of this volume is to provide an overview on the state-of-art in optical spectroscopy covering the focal theoretical and experimental aspects of the last research developments on semiconductor field. Some key topics in semiconductor science, namely: optical spectroscopy as a tool for in situ epitaxial growth monitoring and non-destructive surface and interface characterizations in mesocopic superstructures are addressed in the book. A non-exhaustive list of arguments is: surface and interface characterization, chemical reactions in semiconductor surfaces, heterostructures, quantum wells and superlattices, nanostructures and microlasers.

The book "Channeling 2008", Charged and Neutral Particles Channeling Phenomena, is formed by the same title conference contributions. This volume includes papers by leading researchers from different world centers. Their recent results on the coherent phenomena of charged and neutral particles propagating through the structures of various sizes and periodicities are included here, along with historical reviews by pioneers of coherent Bremsstrahlung and channeling radiation as well as crystal channeling collimation.

The book ?Channeling 2008?, Charged and Neutral Particles Channeling Phenomena, is formed by the same title conference contributions. This volume includes papers by leading researchers from different world centers. Their recent results on the coherent phenomena of charged and neutral particles propagating through the structures of various sizes and periodicities are included here, along with historical reviews by pioneers of coherent bremsstrahlung and channeling radiation as well as crystal channeling collimation.

Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.

Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.