Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.

Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline)

The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributors Presents basic physical concepts developed in this field in recent years in a uniform manner Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

In this book, a novel approach using equations with derivatives of fractional orders is applied to describe anomalous transport and relaxation in disordered semiconductors, dielectrics and quantum dot systems. A relationship between the self-similarity of transport, the Levy stable limiting distributions and the kinetic equations with fractional derivatives is established. It is shown that unlike the well-known Scher-Montroll and Arkhipov-Rudenko models, which are in a sense alternatives to the normal transport model, fractional differential equations provide a unified mathematical framework for describing normal and dispersive transport. The fractional differential formalism allows the equations of bipolar transport to be written down and transport in distributed dispersion systems to be described.

This volume contains papers presented at the Fifth Taniguchi Symposium on the Theory of Condensed Matter, which was held between 2-5 November, 1982, at Shimoda, Japan. The topic of the Symposium was "Topological Disorder in Condensed Matter. " The objective of the Taniguchi Symposium is to encourage activity in those fields of research not in the limelight at the moment but regarded as very promising, such as our theme. Topological disorder refers to the dis order in the positions and connectivities of atoms in amorphous solids and liquids. The development of the physiCS of topologically disorderd systems, though extremely important fundamentally and for application purposes, falls far behind compared to that of other kinds of disorderd systems because the structure characterization of topologically disordered systems is still at a rather primitive stage. The structure characterization is the key to com prehensive understanding of physical properties of any material. Recently, several new attempts at structural analyses have been reported. Encouraged by this fact, our motivation in organizing the symposium was to investigate the possibilities of theoretical approaches to open a breakthrough in the present research situation on this subject. A rough sketch of the problem is made in the Introduction to give the readers a general outline of the subject. Part I is devoted to several at tempts to synthesize and characterize topological disorder more or less by analytical means.

Dieses wichtige Referenzwerk behandelt die grundlegenden Konzepte der Photoleitfähigkeit und der photoleitenden Materialien. Mit Photoconductivity and Photoconductive Materials präsentiert Professor Kasap eine maßgebliche Zusammenstellung der wesentlichen Grundsätze der Photoleitfähigkeit und stellt eine Auswahl aktueller photoleitfähiger Materialien vor. Der erste Band des zweibändigen Werks beginnt mit einer Darstellung der grundlegenden Konzepte und Definitionen. Es folgt eine Charakterisierung der verschiedenen Techniken auf Grundlage von stationärer, transienter und modulierter Photoleitfähigkeit, u.a. der neuen Methode der Ladungsextraktion durch linear steigende Spannung (CELIV). Auch die Physik der Terahertz-Photoleitfähigkeit sowie die Grundlagen der organischen Halbleiter LSoI werden behandelt. Der zweite Band beginnt mit einem umfassenden Überblick über eine Vielzahl unterschiedlicher photoleitfähiger Materialien, wobei der Schwerpunkt auf einige der wichtigsten Photoleiter gelegt wird, darunter hydriertes amorphes Silizium, Cadmium-Quecksilber-Tellurid, verschiedene Röntgenphotoleiter, Diamantfilme, Metallhalogenidperowskite, Nanodrähte und Quantenpunkte. Auch die Anwendungen der photoleitenden Antenne werden erörtert. Das Werk, das zahlreiche Beiträge führender Autoren auf diesem Fachgebiet enthält, bietet den Leserinnen und Lesern außerdem: * Eine gründliche Einführung in die Charakterisierung von Halbleitern mit Hilfe von Techniken der Photoleitfähigkeit, insbesondere gleichmäßiger Beleuchtung und Phototräger-Gittertechniken * Eine umfassende Darstellung organischer Photoleiter mitsamt Informationen zu Photoerzeugung, Transport und Anwendungen im Druckbereich * Praktische Erörterungen der transienten Lichtleitfähigkeit im Flugzeitverfahren inklusive Experimentiertechniken und Interpretationshinweisen * Eine eingehende Betrachtung der transienten Photoleitfähigkeit organischer Halbleiterschichten und neuartiger Techniken der transienten Photoleitfähigkeit Photoconductivity and Photoconductive Materials ist nicht nur ein wichtiges Referenzwerk für Physiker in der Forschung, Materialwissenschaftler und Elektroingenieure, sondern auch ein unverzichtbares Nachschlagewerk für Doktoranden und Studierende höherer Semester, die sich mit dem Bereich der optoelektronischen Materialien beschäftigen, sowie für Forschende in der Industrie. * Ein umfassendes zweibändiges Werk mit Beiträgen führender Fachautoren, herausgegeben von einem angesehenen Forscher auf dem Gebiet der Photoleitfähigkeit

The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference.

This review volume contains articles on the recent developments, new ideas, as well as controversial issues dealing with the general phenomena of hopping transport in disordered systems. Examples of hopping systems of current interest are polymers and biological materials, mesoscopic systems, two- and one-dimensional systems such as MOSFETs, semiconductors near the metal-nonmetal transition, and the new high temperature superconducting materials (in their normal state). The fundamental problems addressed include effects of static and dynamic interactions with phonons, Coulomb interaction, new magnetic effects due to coherent scattering, effects of high electric fields, and relaxation phenomena.