Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

"Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide."--Provided by publisher.

Metal Halide Perovskites for Generation, Manipulation and Detection of Light covers the current state and future prospects of lead halide perovskite photonics and photon sources, both from an academic and industrial point-of-view. Advances in metal halide perovskite photon sources (lasers) based on thin films, microcrystals and nanocrystals are comprehensively reviewed, with leading experts contributing current advances in theory, fundamental concepts, fabrication techniques, experiments and other important research innovations. This book is suitable for graduate students, researchers, scientists and engineers in academia and R&D in industry working in the disciplines of materials science and engineering. - Includes comprehensive reviews from academic and industrial perspectives of current trends in the field of metal halide perovskite for photonics - Provides an up-to-date look at the most recent and upcoming applications in metal halide perovskite photonics, such as; photodetectors, lighting, lasing, nonlinear photonics and quantum technologies - Discusses future prospective trends and envisioned applications of metal halide perovskites, from near-UV to near-IR photonics

The fifth in this series of conferences was held in Santander, Spain from 6 to 10 September 1993, and was attended by workers from industry and research institutes worldwide. Device yield is a crucial factor for determining the choice of semiconducting material made by manufacturers, and that choice is based upon a knowledge of how defects might affect a particular substrate, epilayer or base material. The DRIP conference series was instigated to address the mapping of these technologically important defects. Topics covered at the meeting included silicon, and compound semiconductor substrates and epilayers. Methods for defect recognition included tunelling microscopy, inelastic light scattering (Raman), elastic light scattering, photoluminescence mapping, defect characterization, optical probe beams, and effects of defects on devices. The meeting focused in particular on the microscopic nature of as-grown defects: their distribution as a function of growth conditions, and their redistribution under subsequent heat treatments. The conference dealt with the increasing number and sophistication of visualization techniques which map physical properties of defects, and which may in future permit better control of defect engineering. Researchers in solid state or device physics, or electrical engineering will find this volume an invaluable, up to date reference on the latest techniques for the identification of defects, developments in their control, implications for device fabrication, and future directions for the analysis and mapping of semiconductors.