Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

With contributions by numerous experts

The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.

The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.

The recent conferences in this series were organised in Montreal (1987), Budapest (1989), Kyoto (1991), St Louis (1993) and Palanga (1995). The aim of the conference was to bring together specialists in fluctuation phenomena from different fields and to make a bridge between theoretical scientists and more applied or engineering oriented researchers. Therefore a broad variety of topics covering the fundamental aspects of noise and fluctuations as well as applications in various fields are addressed. Noise in materials, components, circuits and electronic, biological and other physical systems are discussed.

Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book.