The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

The Twelfth International Conference on the Physics of Semiconductors was held at Stuttgart, Federal Republic of Germany, from July 15 to 19, 1974. The Conference was sponsored by the International Union of Pure and Applied Physics and we wish to thank this Organization as well as all the other Institutions and Companies listed on the preceding page for their substantial support. About 700 scientists from 31 countries came to Stuttgart in order to attend the Conference. Following the example of the previous Conference at Warsaw, a distinction was made between plenary invited and invited papers presented at parallel sessions. Altogether, the Proceedings contains 27 invited and 206 contributed papers. The members of the International Program Committee had the difficult task of making a selection from 550 abstracts. Their work was essential for the success of the Conference and it is gratefully acknow­ ledged. The number of pages alloted to each paper had to be limited in order to keep the Proceedings within reasonable size. In general, the papers in the Proceedings have been arranged according to the Conference Program except for the following changes: Each plenary invited paper was associated with an appropriate session, the sessions were put into a slightly different order and, in a few cases, new titles were introduced.

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures, such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade, and the single-electron transistor.

The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

This comprehensive volume covers the latest research on high magnetic fields in semiconductor physics presented at the 16th International Conference (SemiMag 16), held in Tallahassee, Florida, August 2-8, 2004.The book features papers from more than 130 participants including the work of the foremost experts in the fields.Much of the most cutting-edge research is covered by the contributions as well as a special focused session on the recently discovered microwave-induced zero resistance effect.

Proceedings of the International Summer School, held in Nimes, France, September, 3-15, 1979