The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further development of cells. The characterization analyses such as XPS, XRD, SEM, AFM etc., lead to tailor the physical properties of the absorber layers to fit well for the solar cells. The role of secondary phases such as ZnS, Cu2-xS,SnS etc., which are determined by XPS, XRD or Raman, in the absorber layers is promptly discussed. The optical spectroscopy analysis, which finds band gap, optical constants of the films, is mentioned in the book. The electrical properties of the absorbers deal the influence of substrates, growth temperature, impurities, secondary phases etc. The low temperature I-V and C-V measurements of Cu2ZnSn(S1-xSex)4 thin film solar cells are clearly described. The solar cell parameters such as efficiency, fill factor, series resistance, parallel resistance provide handful information to understand the mechanism of physics of thin film solar cells in the book. The band structure, which supports to adjust interface states at the p-n junction of the solar cells is given. On the other hand the role of window layers with the solar cells is discussed. The simulation of theoretical efficiency of Cu2ZnSn(S1-xSex)4 thin film solar cells explains how much efficiency can be experimentally extracted from the cells. - One of the first books exploring how to conduct research on thin film solar cells, including reducing costs - Detailed instructions on conducting research

This thoroughly updated new edition includes an entirely new team of contributing authors with backgrounds specializing in the various new applications of sputtering technology. It forms a bridge between fundamental theory and practical application, giving an insight into innovative new materials, devices and systems. Organized into three parts for ease of use, this Handbook introduces the fundamentals of thin films and sputtering deposition, explores the theory and practices of this field, and also covers new technology such as nano-functional materials and MEMS. Wide varieties of functional thin film materials and processing are described, and experimental data is provided with detailed examples and theoretical descriptions. - A strong applications focus, covering current and emerging technologies, including nano-materials and MEMS (microelectrolmechanical systems) for energy, environments, communications, and/or bio-medical field. New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available - All applications discussed are supported by theoretical discussions, offering readers both the "how" and the "why" of each technique - 40% revision: the new edition includes an entirely new team of contributing authors with backgrounds specializing in the various new applications that are covered in the book and providing the most up-to-date coverage available anywhere

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues. The content of the book has been divided into two sections: (a) the first section (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the second section (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications. In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful. . - Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirements - Practical information on technology trends, role of sputtering and major OEMs - Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. - Practical case-studies on target performance and troubleshooting - Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry

High-efficiency silicon solar cells have been attracting an increased interest in recent years. Surface passivation is essential for various types of high-performance solar cells, particularly when thinner silicon wafers are used to reduce the material cost. Passivating dielectric thin films have been widely studied and used in solar cells designs, these include atomic-layer deposited (ALD) aluminium oxide, plasma-enhanced chemical vapour deposited (PECVD) silicon nitride and PECVD intrinsic amorphous silicon. The aim of this thesis is to develop and optimise an alternative deposition method for surface passivating films: sputtering. Sputtering is especially attractive for industrial production, due to its high throughput, easy and safe operation and global cost-effectiveness. This thesis has focussed on optimising the reactive sputtering of aluminium oxide, using an aluminium target, and the non-reactive sputtering of amorphous silicon, using a silicon target. A key innovation has been the addition of hydrogen to the mix of gasses that form the plasma, which permits to incorporate hydrogen into the films, leading to a significantly improved surface passivation quality compared to non-hydrogenated films. We have achieved the best surface passivation results by sputtered aluminium oxide to date, with an effective surface recombination velocity of 1 cm/s on 1.5 ohm-cm n-type silicon. This result is similar to the SRV of 0.9 cm/s measured on aluminium oxide films deposited by PA-ALD on the same substrates. Good passivation was also achieved on p-type silicon. The investigations into the reactive sputtering process have shown that the film properties are closely related to the oxidation level of the aluminium target, which can be controlled by adjusting process parameters. It has also been found that the presence of hydrogen in the plasma is beneficial for establishing the optimum conditions of the deposition; not only does the surface passivation quality improve, but the reactive sputtering process becomes easier to control as well.We have also shown - for the first time - that intrinsic amorphous silicon (a-Si:H) films by sputtering deposition are capable of providing an excellent passivation of crystalline silicon surfaces. A SRV of 1.5 cm/s on 1.5 ohm-cm n-type silicon and SRV of 9 cm/s on 1 ohm-cm p-type silicon have been achieved, which are comparable to the commonly used PECVD deposited a-Si:H films. After investigating the film properties using Fourier Transform Infrared Spectroscopy (FTIR), we observe that our sputtered a-Si:H films have a characteristic signature in terms of chemical bonding configurations, where several types of silicon-hydrogen bonds exist. From those measurements we have estimated that there is approximately a 4% hydrogen concentration in the films, sufficient to achieve excellent surface passivation. Finally, the thesis also presents initial attempts at developing doped amorphous silicon films, which could enable the development of an all-sputtered silicon heterojunction solar cell technology. Lightly doped a-Si:H films were deposited using a 1% boron doped silicon target and a 0.01% phosphorus doped silicon target. We have found an appropriate way to avoid surface passivation degradation caused by the doped layer deposition onto an intrinsic a-Si:H layer.